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ON MJD44H11-1G
Bipolar (BJT) Transistor NPN 80 V 8 A 85MHz 1.75 W Through Hole I-PAK
Brands: ON Semiconductor, LLC
Mfr.Part #: MJD44H11-1G
Datasheet: MJD44H11-1G Datasheet (PDF)
Package/Case: TO-251
RoHS Status:
Stock Condition: 2020 pcs, New Original
Product Type: Transistors
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1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.577 | $0.577 |
| 10 | $0.471 | $4.710 |
| 30 | $0.419 | $12.570 |
| 75 | $0.367 | $27.525 |
| 525 | $0.336 | $176.400 |
| 975 | $0.319 | $311.025 |
In Stock:2020 PCS
MJD44H11-1G General Description
The Bipolar Power Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.
Features
- Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("-1" Suffix)
- Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)
- Electrically Similar to Popular D44H/D45H Series
- Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
- Fast Switching Speeds
- Complementary Pairs Simplifies Designs
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS Compliant
Application
ONSEMISpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | ON Semiconductor | Product Category: | Bipolar Transistors - BJT |
| RoHS: | Y | Mounting Style: | Through Hole |
| Package / Case: | DPAK-3 | Transistor Polarity: | NPN |
| Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector- Base Voltage VCBO: | 5 V | Emitter- Base Voltage VEBO: | 5 V |
| Collector-Emitter Saturation Voltage: | 1 V | Maximum DC Collector Current: | 8 A |
| Gain Bandwidth Product fT: | 85 MHz | Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C | Series: | MJD44H11 |
| Height: | 6.35 mm | Length: | 6.73 mm |
| Packaging: | Tube | Width: | 2.38 mm |
| Brand: | ON Semiconductor | Continuous Collector Current: | 8 A |
| DC Collector/Base Gain hfe Min: | 60 | Pd - Power Dissipation: | 20 W |
| Product Type: | BJTs - Bipolar Transistors | Factory Pack Quantity: | 75 |
| Subcategory: | Transistors | Unit Weight: | 0.012346 oz |
| Tags | MJD44H11-1, MJD44H1, MJD44H, MJD44, MJD4, MJD |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The MJD44H11-1G chip is a high-voltage Darlington transistor designed for general-purpose applications. It has a maximum collector current of 4A and a collector-emitter voltage of 250V. This chip is ideal for use in applications such as motor control, switching, and linear amplification. Its compact size and robust design make it suitable for a wide range of industrial and automotive applications.
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Equivalent
There are several equivalent products of the MJD44H11-1G chip, including MJD44H11G, MJD44H11T4G, MJD44H11T4, MJD44H11T4G, and MJD44H11. These chips have similar characteristics and can be used as direct replacements for the MJD44H11-1G. -
Features
The MJD44H11-1G is an NPN Darlington transistor. It has a collector current of 8A, a maximum collector power dissipation of 80W, and a collector-emitter voltage of 100V. Other features include a high DC current gain, low saturation voltage, and a built-in damper diode for inductive loads. -
Pinout
The MJD44H11-1G is a power transistor with a TO-252 (DPAK) package. It has 3 pins: pin 1 is the collector, pin 2 is the base, and pin 3 is the emitter. -
Manufacturer
The manufacturer of the MJD44H11-1G is ON Semiconductor. ON Semiconductor is a global semiconductor manufacturing company that specializes in the development, production, and sale of semiconductor components for various industries such as automotive, consumer electronics, and industrial applications. -
Application Field
The MJD44H11-1G is a power transistor commonly used in applications such as power amplification, motor control, and general-purpose switching circuits. It can be used in various industries including automotive, telecommunications, industrial automation, and consumer electronics. -
Package
The MJD44H11-1G chip has a package type of DPAK (TO-252), a form of surface mount, and a size of 6.6mm x 9.15mm.
Datasheet PDF
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