Orders Over
$5000IPB042N10N3G
N-Channel 100 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3
Brands: Infineon Technologies
Mfr.Part #: IPB042N10N3G
Datasheet: IPB042N10N3G Datasheet (PDF)
Package/Case: TO-263-3,D2PAK(2Leads+Tab),TO-263AB
RoHS Status:
Stock Condition: 7,694 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $1.315 | $1.315 |
10 | $1.117 | $11.170 |
30 | $1.010 | $30.300 |
100 | $0.888 | $88.800 |
500 | $0.752 | $376.000 |
1000 | $0.727 | $727.000 |
In Stock: 7,694 PCS
IPB042N10N3G General Description
N-Channel 100 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Series | OptiMOS™ | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 150µA | Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |
Power Dissipation (Max) | 214W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IPB042N10N3G is a power MOSFET chip designed for high efficiency and low power dissipation in electronic devices. It offers a low on-state resistance and high current carrying capability, making it ideal for various power switching applications. With its advanced technology and robust design, the IPB042N10N3G chip is a reliable choice for enhancing the performance of power management systems.
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Equivalent
The equivalent products of IPB042N10N3G chip are Infineon IPP042N10N3G, Vishay SiB467EDR-T1-GE3, and Renesas IPS042N03LA. These are all power MOSFET transistors that can be used as substitutes for the IPB042N10N3G in various electronic applications. -
Features
- MOSFET transistor - Power rating of 42A - Voltage rating of 100V - Low on-state resistance - Suitable for use in high power applications - RoHS compliant -
Pinout
The IPB042N10N3G is a N-channel power MOSFET with a pin count of 3. It functions as a switching element in power management applications, offering a low ON-resistance of 4.2mΩ and a maximum drain current of 65A. -
Manufacturer
The manufacturer of the IPB042N10N3G is Infineon Technologies. It is a German semiconductor manufacturer specializing in power management, sensor solutions, automotive electronics, and security products. Infineon is a global company with a strong focus on innovation, sustainability, and customer satisfaction. -
Application Field
The IPB042N10N3G is commonly used in power management applications such as motor control, DC-DC converters, and electronic load switches. It is suitable for a wide range of industrial and automotive applications where high efficiency and reliability are required. -
Package
The IPB042N10N3G chip is a D2PAK package type, in a surface mount form, with a size of 10.5 mm x 8.5 mm x 4 mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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