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K6R4008V1D-UI10
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 10ns 44-Pin TSOP-II
Brands: SAMSUNG
Mfr.Part #: K6R4008V1D-UI10
Datasheet: K6R4008V1D-UI10 Datasheet (PDF)
Package/Case: TSOP-44
K6R4008V1D-UI10 General Description
GENERAL DESCRIPTION The K6R4008C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4008C1D is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.FEATURES • Fast Access Time 10ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4008C1D-10 : 65mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible Inputs and Outputs • Fully Static Operation - No Clock or Refresh required • Three State Outputs • Center Power/Ground Pin Configuration • Standard Pin Configuration K6R4008C1D-J : 36-SOJ-400 K6R4008C1D-K : 36-SOJ-400(Lead-Free) K6R4008C1D-T : 44-TSOP2-400BF K6R4008C1D-U : 44-TSOP2-400BF(Lead-Free) • Operating in Commercial and Industrial Temperature range.
Features
- Fast Access Time 10ns(Max.)
- Low Power Dissipation
- Standby (TTL) : 20mA(Max.)
- (CMOS) : 5mA(Max.)
- Operating K6R4008C1D-10 : 65mA(Max.)
- Single 5.0V±10% Power Supply
- TTL Compatible Inputs and Outputs
- Fully Static Operation
- - No Clock or Refresh required
- Three State Outputs
- Center Power/Ground Pin Configuration
- Standard Pin Configuration
- K6R4008C1D-J : 36-SOJ-400
- K6R4008C1D-K : 36-SOJ-400(Lead-Free)
- K6R4008C1D-T : 44-TSOP2-400BF
- K6R4008C1D-U : 44-TSOP2-400BF(Lead-Free)
- Operating in Commercial and Industrial Temperature range.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| ISSI | ISSI | SRAM | SRAM |
| Details | Details | 4 Mbit | 4 Mbit |
| 512 k x 8 | 512 k x 8 | 10 ns | 10 ns |
| - | - | Parallel | Parallel |
| 3.6 V | 3.6 V | 2.4 V | 2.4 V |
| 45 mA | 45 mA | - 40 C | - 40 C |
| + 85 C | + 85 C | SMD/SMT | SMD/SMT |
| TSOP-44 | TSOP-44 | Tube | Tube |
| SDR | SDR | Yes | Yes |
| 1 | 1 | IS61WV5128BLL | IS61WV5128BLL |
| 135 | 135 | Memory & Data Storage | Memory & Data Storage |
| Asynchronous | Asynchronous |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The K6R4008V1D-UI10 is a high-speed, low-power synchronous dynamic random access memory (SDRAM) chip designed for use in a wide range of electronic devices, such as computers, printers, and networking equipment. This chip offers a capacity of 512 megabytes and operates at a clock speed of 100 MHz, making it suitable for demanding applications that require fast data access.
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Equivalent
The equivalent products of K6R4008V1D-UI10 chip are Samsung K6R4008V1D-UI10, Micron MT48LC4M16A2P-6A, Hynix HY5DU281622ET-6, and Toshiba TC58V64FT-6B. These chips are commonly used as synchronous DRAM (SDRAM) products with similar specifications and performance characteristics. -
Features
K6R4008V1D-UI10 is a 512Kx8 bit Low Power CMOS Static RAM with advanced technology and non-volatile data storage. It features a wide operating voltage and temperature range, fast access time, low power consumption, and industry-standard pin configuration. It is ideal for battery-powered devices, automotive applications, and industrial control systems. -
Pinout
The K6R4008V1D-UI10 is a 32Mx8 bit low power synchronous static RAM with 3.3V power supply. It has a pin count of 32 pins with functions such as data inputs/outputs, address input, chip select, write enable, output enable, and clock. -
Manufacturer
The manufacturer of K6R4008V1D-UI10 is Samsung Electronics, a South Korean multinational company known for producing a wide range of electronic products including smartphones, televisions, semiconductors, and memory chips. Samsung Electronics is one of the world's largest technology companies and a leading player in the global semiconductor industry. -
Application Field
The K6R4008V1D-UI10 is commonly used in telecommunications equipment, networking devices, industrial machinery control systems, automotive electronics, and medical equipment. It is designed for high-performance applications that require fast data processing and reliable memory storage. -
Package
The K6R4008V1D-UI10 chip is a 512K x 8 bit Low Power and Low Voltage CMOS Static RAM. It comes in a 32-pin TSOP-II package with a form factor of 400-µm pitch, 9.378 mm width, and 14 mm length.
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