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IXTX210P10T
Trans MOSFET P-CH 100V 210A 3-Pin(3+Tab) PLUS 247
Brands: IXYS
Mfr.Part #: IXTX210P10T
Datasheet: IXTX210P10T Datasheet (PDF)
Package/Case: TO-247-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomIXTX210P10T General Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.
Features
- Fast intrinsic diode
- Low Q
- g
- and RDS
- on
- Avalanche rated
- Extended FBSOA
- International standard packages
- Advantages:
- Low gate charge resulting in simple drive requirement
- High power density
- Fast switching
Application
- High-side switching
- Load switches
- Low voltage applications
- High-efficiency switching power supplies
- Inverters and battery chargers
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | IXYS | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
| Transistor Polarity: | P-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V | Id - Continuous Drain Current: | 210 A |
| Rds On - Drain-Source Resistance: | 7.5 mOhms | Vgs - Gate-Source Voltage: | - 15 V, + 15 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V | Qg - Gate Charge: | 740 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 1.04 kW | Channel Mode: | Enhancement |
| Tradename: | TrenchP | Series: | IXTX210P10 |
| Packaging: | Tube | Brand: | IXYS |
| Configuration: | Single | Fall Time: | 55 ns |
| Forward Transconductance - Min: | 90 S | Height: | 21.34 mm |
| Length: | 16.13 mm | Product Type: | MOSFET |
| Rise Time: | 98 ns | Factory Pack Quantity: | 30 |
| Subcategory: | MOSFETs | Type: | TrenchP Power MOSFET |
| Typical Turn-Off Delay Time: | 165 ns | Typical Turn-On Delay Time: | 90 ns |
| Width: | 5.21 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXTX210P10T chip is a high-performance power transistor that is designed for use in industrial applications. It offers a high power rating and a low on-resistance, allowing it to handle large amounts of current with minimal heat dissipation. This chip is commonly used in motor control, power supplies, and other applications where efficient power handling is essential.
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Features
The IXTX210P10T features a single-channel, high-voltage gate driver that is capable of driving devices up to 1200V. It offers low power consumption, integrated protection features, and a wide range of input and output voltage. Additionally, it has a compact package design, making it suitable for various industrial applications. -
Pinout
The IXTX210P10T is a power semiconductor device with 3 pins, serving as a high voltage IGBT transistor. The pins are for the collector, emitter, and gate, respectively. -
Manufacturer
The manufacturer of the IXTX210P10T is IXYS Corporation. It is a semiconductor company that designs, develops, manufactures, and markets power semiconductors, mixed-signal integrated circuits, and more. -
Application Field
The IXTX210P10T is a power MOSFET transistor that can be used in various applications such as industrial automation, motor control, power supplies, and automotive systems. Its high efficiency and low on-resistance make it suitable for high-power applications where reliability and thermal performance are important. -
Package
The IXTX210P10T chip is available in the BGA package type with a form factor of 35mm x 35mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
