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IXTX200N10L2
Trans MOSFET N-CH 100V 200A 3-Pin(3+Tab) ISOPLUS 247
Brands: IXYS
Mfr.Part #: IXTX200N10L2
Datasheet: IXTX200N10L2 Datasheet (PDF)
Package/Case: TO-247-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomIXTX200N10L2 General Description
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA).When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C.
Features
- Designed for linear operation
- Guaranteed FBSOA at 75°C
- Low on-resistances R
- DS(on)
- Avalanche rated
- International standard packages
- UL 94 V-0 Flammability qualified
- (molding epoxies)
Application
- E-fuses and hot-swap circuits
- Battery management
- Current regulators
- Linear amplifiers
- Fan controllers
- Programmable loads
- Soft-start control
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | IXYS | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V | Id - Continuous Drain Current: | 200 A |
| Rds On - Drain-Source Resistance: | 11 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V | Qg - Gate Charge: | 540 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 1.04 kW | Channel Mode: | Enhancement |
| Tradename: | Linear L2 | Series: | IXTX200N10 |
| Packaging: | Tube | Brand: | IXYS |
| Configuration: | Single | Fall Time: | 27 ns |
| Forward Transconductance - Min: | 55 S | Height: | 21.34 mm |
| Length: | 16.13 mm | Product Type: | MOSFET |
| Rise Time: | 225 ns | Factory Pack Quantity: | 30 |
| Subcategory: | MOSFETs | Type: | Linear L2 Power MOSFET |
| Typical Turn-Off Delay Time: | 127 ns | Typical Turn-On Delay Time: | 40 ns |
| Width: | 5.21 mm | Unit Weight: | 0.211644 oz |
| Series | Linear L2™ | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 100A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 540 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 25 V | Power Dissipation (Max) | 1040W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | PLUS247™-3 | Package / Case | TO-247-3 Variant |
| Base Product Number | IXTX200 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXTX200N10L2 chip is a high-power N-channel MOSFET designed for power supply applications. It has a maximum voltage rating of 100V and a continuous drain current of 200A. The chip features low on-state resistance and high switching speed, making it suitable for high power and high frequency applications.
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Equivalent
The equivalent products of IXTX200N10L2 chip are Infineon IPP200N10N3G and IRFZ44NPBF from International Rectifier. These chips have similar specifications and can be used as replacements for the IXTX200N10L2 in various applications. -
Features
The IXTX200N10L2 is a high power, high performance MOSFET with a maximum voltage rating of 100V, a continuous drain current of 200A, and low on-resistance. It also features a compact and rugged design, making it ideal for use in power electronics applications such as motor drives, converters, and inverters. -
Pinout
The IXTX200N10L2 is a 50-pin power module that functions as a high-efficiency integrated power supply and gate drive solution for industrial applications, such as motors, inverters, and power converters. It features high input voltage, low power dissipation, and built-in protection features for enhanced reliability and performance. -
Manufacturer
The manufacturer of the IXTX200N10L2 is Powerex, a leading manufacturer of power semiconductors such as IGBTs, SiCs, and diodes for a wide range of industrial applications. Powerex is a subsidiary of Mitsubishi Electric Corporation and specializes in providing high-quality, reliable power components for improving energy efficiency and performance in various industries. -
Application Field
The IXTX200N10L2 is commonly used in applications such as motor drives, power supplies, welding equipment, and industrial automation. It is suitable for high power and high voltage applications due to its robust design and high efficiency. -
Package
The IXTX200N10L2 chip comes in a MOSFET (metal-oxide-semiconductor field-effect transistor) package. It is in a TO-268 form factor, also known as a D2PAK (Dual Diode-Pak). The size of the package is approximately 10.29mm x 12.19mm x 4.57mm.
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