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IXTH20N60
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247AD
Brands: IXYS CORP
Mfr.Part #: IXTH20N60
Datasheet: IXTH20N60 Datasheet (PDF)
Package/Case: TO-247-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 7519 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomIXTH20N60 General Description
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators.
Features
- International standard packages
- Fast switching times
- Avalanche rated
- Rugged Polysilicon Gate Cell structure
- Ultra-low R
- DS(on)
Application
- Capacitor discharge circuits
- High voltage power supplies
- Pulse circuits
- Level shifting
- Solid State Relays
- Triggers
- Advantages:
- Easy to mount
- Space savings
- High power density
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Transferred | Ihs Manufacturer | IXYS CORP |
| Part Package Code | TO-247AD | Package Description | TO-247AD, 3 PIN |
| Pin Count | 3 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
| Case Connection | ISOLATED | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 20 A |
| Drain-source On Resistance-Max | 0.35 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247AD | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 300 W | Power Dissipation-Max (Abs) | 300 W |
| Pulsed Drain Current-Max (IDM) | 80 A | Qualification Status | Not Qualified |
| Surface Mount | NO | Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXTH20N60 is a high voltage and high speed switching N-channel power MOSFET chip commonly used in power electronics applications. It can handle a maximum voltage of 600V and a continuous current of 20A. Its compact size and efficient operation make it a popular choice for a wide range of industrial and consumer electronics projects.
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Equivalent
Some equivalent products of the IXTH20N60 chip are the IRG4PH50UD and the HGTG20N60A4D. These chips are power semiconductor devices used for various applications such as motor control, power supplies, and inverters. They all offer similar specifications and performance characteristics to the IXTH20N60. -
Features
IXTH20N60 is a Power MOSFET with a maximum voltage rating of 600V, continuous drain current of 20A, and a low on-resistance of 0.2 ohms. It offers high power handling capability, fast switching speeds, and low gate charge. This MOSFET is suitable for high power applications such as power supplies, inverters, and motor control. -
Pinout
The IXTH20N60 is a high voltage power MOSFET with a TO-247 package type. It has 3 pins: Gate, Drain, and Source. The Gate pin is used to control the flow of current between the Drain and Source pins, making it ideal for high voltage applications. -
Manufacturer
The IXTH20N60 is manufactured by IXYS Corporation, a global semiconductor company that specializes in power and advanced technology platforms. They develop and produce a wide range of power semiconductor devices, integrated circuits, and RF power products used in various industries such as automotive, industrial, healthcare, and consumer electronics. -
Application Field
The IXTH20N60 is a high voltage, high speed IGBT (Insulated Gate Bipolar Transistor) that is commonly used in power electronic applications such as motor control, power supplies, inverters, and converters. It is ideal for applications that require fast switching speeds, high efficiency, and high voltage capabilities. -
Package
The IXTH20N60 chip comes in a TO-247 package type. It is in a transistor form and features a size of 25mm x 16mm x 10mm.
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