IXFP3N120
Trans MOSFET N-CH 1.2KV 3A 3-Pin(3+Tab) TO-220AB
Brands: IXYS
Mfr.Part #: IXFP3N120
Datasheet: IXFP3N120 Datasheet (PDF)
Package/Case: TO-220-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $5.392 | $5.392 |
200 | $2.087 | $417.400 |
500 | $2.014 | $1007.000 |
1000 | $1.977 | $1977.000 |
In Stock:9458 PCS
IXFP3N120 General Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.
Features
- International Standard Packages
- High Current Handling Capability
- Low R
- DS(on)
- HDMOS process
- Avalanche Rated
- Low Package Inductance
- Fast intrinsic diode
Application
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC Motor Drives
- Temperature and Lighting Controls
- Advantages:
- Easy to mount
- Space savings
- High power density
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | IXYS | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV | Id - Continuous Drain Current: | 3 A |
Rds On - Drain-Source Resistance: | 4.5 Ohms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V | Qg - Gate Charge: | 39 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 200 W | Channel Mode: | Enhancement |
Tradename: | HiPerFET | Series: | HiPerFET |
Packaging: | Tube | Brand: | IXYS |
Configuration: | Single | Fall Time: | 18 ns |
Forward Transconductance - Min: | 1.5 S | Height: | 16 mm |
Length: | 10.66 mm | Product Type: | MOSFET |
Rise Time: | 15 ns | Factory Pack Quantity: | 50 |
Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
Type: | HiPerFET Power MOSFET | Typical Turn-Off Delay Time: | 32 ns |
Typical Turn-On Delay Time: | 17 ns | Width: | 4.83 mm |
Unit Weight: | 0.068784 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXFP3N120 is a power MOSFET chip widely used for high voltage and high current applications. It features a 1200V drain-source voltage rating and a maximum continuous drain current of 3A. The chip is designed for efficient power switching in areas such as motor control, power supplies, and inverters. Its compact size and robust performance make it a popular choice among designers for various industrial and consumer electronic applications.
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Equivalent
The equivalent products of the IXFP3N120 chip are the IPP051N12N3GXKSA1 and the BSM251N12NS3 G. -
Features
IXFP3N120 is a Power MOSFET transistor with a rated voltage of 1200V, a current rating of 3A, and a low on-resistance of 1.4Ω. It is designed for high-power applications, ensuring efficient switching and minimal power losses. The transistor also features a ruggedized design, allowing it to withstand high voltage and temperature conditions. -
Pinout
The IXFP3N120 is a power MOSFET transistor. It has 3 pins: gate, drain, and source. The gate pin is used to control the switching of the transistor, while the drain and source pins facilitate the flow of current. -
Manufacturer
The manufacturer of the IXFP3N120 is IXYS Corporation. IXYS Corporation is a semiconductor company that specializes in the development, manufacture, and marketing of power semiconductors, advanced mixed-signal integrated circuits, and RF power products. -
Application Field
The IXFP3N120 is a power metal-oxide-semiconductor field-effect transistor (MOSFET) used for high voltage switching applications. It can be found in various areas such as motor control systems, power supplies, and inverters. -
Package
The IXFP3N120 chip is available in a TO-220 package type. It comes in a single form and has a size of approximately 10.16 mm x 15.88 mm, with its pins extending from the bottom of the package.
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Minimum order quantity starts from 1pcs.
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