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IXFH26N60Q

N-Channel 600 V 26A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

ISO14001 ISO9001 DUNS

Brands: IXYS

Mfr.Part #: IXFH26N60Q

Datasheet: IXFH26N60Q Datasheet (PDF)

Package/Case: TO-247-3

Product Type: MOSFET

RoHS Status:

Stock Condition: 9458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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Please submit RFQ for IXFH26N60Q or email to us: Email: [email protected], we will contact you within 12 hours.

IXFH26N60Q General Description

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.

Features

  • International standard packages
  • Rugged polysilicon gate cell structure
  • Rated for Unclamped Inductive Load Switching (UIS)
  • Fast intrinsic Rectifier

Application

  • DC-DC converters
  • Battery chargers
  • Switched-mode and resonant-mode power supplies
  • DC choppers
  • AC motor control
  • Advantages:
  • Easy assembly
  • High Power density
  • Space savings

Specifications

Parameter Value Parameter Value
Manufacturer: IXYS Product Category: MOSFET
RoHS: Details Technology: Si
Mounting Style: Through Hole Package / Case: TO-247-3
Transistor Polarity: N-Channel Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 26 A
Rds On - Drain-Source Resistance: 250 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 360 W Channel Mode: Enhancement
Tradename: HyperFET Series: IXFH26N60
Packaging: Tube Brand: IXYS
Configuration: Single Fall Time: 16 ns
Forward Transconductance - Min: 22 S Height: 21.46 mm
Length: 16.26 mm Product Type: MOSFET
Rise Time: 32 ns Factory Pack Quantity: 30
Subcategory: MOSFETs Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 80 ns Typical Turn-On Delay Time: 30 ns
Width: 5.3 mm

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • IXFH26N60Q chip is a power MOSFET semiconductor device used in various high-power applications. It features a low on-resistance, high current capability, and fast switching speed. The chip can handle high voltage and current levels efficiently, making it suitable for power supplies, motor drives, and industrial controls. Its robust construction and thermal management capabilities make it reliable for demanding applications.
  • Equivalent

    Equivalent products of the IXFH26N60Q chip include the STW18N60M2, STB26N60MQ, PSMN2R9-60YMS, and IPP60R280P6XKSA1. These devices have similar specifications and functionalities to the IXFH26N60Q chip.
  • Features

    The IXFH26N60Q is a power MOSFET with a voltage rating of 600V and a current rating of 26A. It offers low on-resistance, fast switching capability, and high avalanche ruggedness. The device is suitable for use in various power applications, such as switch mode power supplies, motor control systems, and electronic ballasts.
  • Pinout

    The IXFH26N60Q is a MOSFET transistor with 4 pins. The pins are used for different functions: pin 1 is for the gate, pin 2 is for the source, pin 3 is for the drain, and pin 4 is for the body/diode.
  • Manufacturer

    Infineon Technologies AG is the manufacturer of the IXFH26N60Q. It is a German semiconductor manufacturing company that focuses on power semiconductors and system solutions.
  • Application Field

    The IXFH26N60Q is a power MOSFET commonly used in applications such as switch mode power supplies, UPS systems, motor controls, and welding equipment.
  • Package

    The IXFH26N60Q chip is packaged in a TO-247 form, which is a through-hole package type. The package size of this chip is relatively larger compared to other surface-mount packages.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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