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Infineon IRFB38N20DPBF

Trans MOSFET N-CH 200V 43A 3-Pin(3+Tab) TO-220AB Tube

Ovaga Certification

Brands: Infineon Technologies Corporation

Mfr.Part #: IRFB38N20DPBF

Datasheet: IRFB38N20DPBF Datasheet (PDF)

Package/Case: TO-220AB

RoHS Status:

Stock Condition: 3024 pcs, New Original

Product Type: Transistors

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $1.433 $1.433
10 $1.229 $12.290
50 $0.952 $47.600
100 $0.823 $82.300
500 $0.768 $384.000
1000 $0.742 $742.000

In Stock:3024 PCS

- +

*Products eligible for online ordering ship within 1-2 business days,please contact us for exact shipping times.

Quick Quote

Please submit RFQ for IRFB38N20DPBF or email to us: Email: [email protected], we will contact you within 12 hours.

IRFB38N20DPBF General Description

MOSFET, N, 200V, 44A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:200V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:44A; Junction to Case Thermal Resistance A:0.47°C/W; On State resistance @ Vgs = 10V:54ohm; Package / Case:TO-220AB; Power Dissipation Pd:320W; Power Dissipation Pd:320W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

irfb38n20dpbf

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered

Specifications

Parameter Value Parameter Value
RHoS yes PBFree yes
HalogenFree yes

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The IRFB38N20DPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage and high-speed switching applications. It offers low on-state resistance and high current capability, making it ideal for use in power supplies, motor control, and other electronic devices that require efficient power management.
  • Equivalent

    The equivalent products of IRFB38N20DPBF chip are IRFB38N20D, IRFB38N20DPbF, IRFB38N20, IRFB38N20D-Tab, and IRFB38N20D.
  • Features

    The IRFB38N20DPBF is a power MOSFET transistor with a voltage rating of 200V, a current rating of 42A, and a low on-resistance of 0.095 ohms. It has a TO-220AB package and is suitable for use in high-power switching applications such as motor controls, inverters, and power supplies.
  • Pinout

    The IRFB38N20DPBF is a power MOSFET with a TO-220AB package. It has 3 pins: Gate, Drain, and Source. The Gate pin controls the flow of current between the Drain and Source pins, allowing for high-performance power switching applications.
  • Manufacturer

    The IRFB38N20DPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer specializing in power and sensor systems. Infineon Technologies AG produces a wide range of semiconductor products for various applications, including automotive, industrial, and consumer electronics industries.
  • Application Field

    The IRFB38N20DPBF is commonly used in applications such as motor control, power supplies, inverters, and switching regulators. It is also suitable for use in industrial, telecommunications, and automotive systems where high power handling and efficiency are required.
  • Package

    The IRFB38N20DPBF chip is a TO-220 package type, with a through hole form. It has a size of 10.67mm x 16.51mm x 4.57mm.

Datasheet PDF

Preliminary Specification IRFB38N20DPBF PDF Download

Key points

  • The IRFB38N20DPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage and high-speed switching applications. It offers low on-state resistance and high current capability, making it ideal for use in power supplies, motor control, and other electronic devices that require efficient power management.
  • Equivalent

    The equivalent products of IRFB38N20DPBF chip are IRFB38N20D, IRFB38N20DPbF, IRFB38N20, IRFB38N20D-Tab, and IRFB38N20D.
  • Features

    The IRFB38N20DPBF is a power MOSFET transistor with a voltage rating of 200V, a current rating of 42A, and a low on-resistance of 0.095 ohms. It has a TO-220AB package and is suitable for use in high-power switching applications such as motor controls, inverters, and power supplies.
  • Pinout

    The IRFB38N20DPBF is a power MOSFET with a TO-220AB package. It has 3 pins: Gate, Drain, and Source. The Gate pin controls the flow of current between the Drain and Source pins, allowing for high-performance power switching applications.
  • Manufacturer

    The IRFB38N20DPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer specializing in power and sensor systems. Infineon Technologies AG produces a wide range of semiconductor products for various applications, including automotive, industrial, and consumer electronics industries.
  • Application Field

    The IRFB38N20DPBF is commonly used in applications such as motor control, power supplies, inverters, and switching regulators. It is also suitable for use in industrial, telecommunications, and automotive systems where high power handling and efficiency are required.
  • Package

    The IRFB38N20DPBF chip is a TO-220 package type, with a through hole form. It has a size of 10.67mm x 16.51mm x 4.57mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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