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Infineon IPP60R074C6
MOSFET N-Ch 650V 57.7A TO220-3
Brands: Infineon Technologies Corporation
Mfr.Part #: IPP60R074C6
Datasheet: IPP60R074C6 Datasheet (PDF)
Package/Case: TO-220-3
Product Type: Transistors
IPP60R074C6 General Description
IPP60R074C6 is a specific type of power MOSFET, which is a semiconductor device used for switching and amplification of electronic signals in power applications.
Features
- It has a maximum voltage rating of 600V.
- It can handle a maximum current of 60A.
- It has a low on-resistance of 0.074 ohms, which makes it efficient in power applications.
- It has a fast switching speed.
Application
- Power supplies
- Motor control
- Solar inverters
- Lighting systems
- DC-DC converters
- Welding equipment
- Uninterruptible power supplies (UPS)
- High-frequency switching applications
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Infineon | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 57.7 A |
| Rds On - Drain-Source Resistance: | 67 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V | Qg - Gate Charge: | 138 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 480.8 W | Channel Mode: | Enhancement |
| Tradename: | CoolMOS | Series: | CoolMOS C6 |
| Packaging: | Tube | Brand: | Infineon Technologies |
| Configuration: | Single | Fall Time: | 4 ns |
| Height: | 15.65 mm | Length: | 10 mm |
| Product Type: | MOSFET | Rise Time: | 7 ns |
| Factory Pack Quantity: | 500 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 56 ns |
| Typical Turn-On Delay Time: | 11 ns | Width: | 4.4 mm |
| Part # Aliases: | IPP6R74C6XK SP000898652 IPP60R074C6XKSA1 | Unit Weight: | 0.068784 oz |
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 57.7 A | Rds On - Drain-Source Resistance | 67 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 138 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 480.8 W |
| Channel Mode | Enhancement | Tradename | CoolMOS |
| Series | CoolMOS C6 | Brand | Infineon Technologies |
| Configuration | Single | Fall Time | 4 ns |
| Height | 15.65 mm | Length | 10 mm |
| Product Type | MOSFET | Rise Time | 7 ns |
| Factory Pack Quantity | 500 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 56 ns |
| Typical Turn-On Delay Time | 11 ns | Width | 4.4 mm |
| Part # Aliases | IPP6R74C6XK SP000898652 IPP60R074C6XKSA1 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the IPP60R074C6 component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : IRFP4710PBF
Brands :
Package : TO-247(AC)
Description : MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.011Ω; ID 72A; TO-247AC; PD 190W; VGS +/-20V
Part Number : IRFP460LC-ND
Brands :
Package :
Description :
Part Number : STP60NF06L
Brands :
Package : TO-220
Description : N-CHANNEL 60V - 0.012 Ohm - 60A TO-220 / TO-220FP / D2PAK STripFETTM II POWER MOSFET
Part Number : STP55NF06L
Brands :
Package : TO-220
Description : N CHANNEL MOSFET, 60V, 55A,Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.014ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, No. of Pins:3 Power MOSFET
Part Number : FDP047AN08A0
Brands :
Package :
Description :
Part points
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IPP60R074C6 is a power MOSFET semiconductor chip widely used in electronic devices for high-voltage applications. It offers low on-state resistance and high switching speeds, making it efficient for power management and control. The chip is designed for optimal performance in modern electronic systems requiring reliable and high-power operation.
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Equivalent
The equivalent products of IPP60R074C6 chip are IPP60R074C7, IPP60R074CP, IPP60R190C6, IPP60R190C7, IPP60R190CP, and IPP60R190P7. These chips are all power MOSFETs with similar specifications and performance characteristics. -
Features
1. N-channel power MOSFET 2. 600V drain-source voltage 3. 60A continuous drain current 4. Low switching losses 5. 1.4V gate threshold voltage 6. Optimized for high-frequency applications 7. Excellent thermal performance 8. Suitable for motor drives, inverters, and industrial applications. -
Pinout
The IPP60R074C6 is a power MOSFET with a TO-220 package. It has 3 pins: gate, drain, and source. The gate pin controls the flow of current between the drain and source pins. It is commonly used in power supply applications due to its high voltage and current handling capabilities. -
Manufacturer
The IPP60R074C6 is manufactured by Infineon Technologies. Infineon Technologies is a German semiconductor manufacturer specializing in the production of a wide range of semiconductor products for various applications, including automotive, industrial, and power management. They are known for their high-quality and innovative products in the industry. -
Application Field
The IPP60R074C6 is a power MOSFET suitable for a wide range of applications including automotive, industrial, and consumer electronics. It is commonly used in power supplies, motor control, lighting, and audio amplifiers due to its high efficiency, low on-resistance, and robust construction. -
Package
The IPP60R074C6 chip is a Power MOSFET transistor in a TO-220 package type. It is in a through-hole form with a size of 10.4mm x 4.1mm x 9.7mm.
Datasheet PDF
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