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Infineon IPD050N10N5
MOSFET TRENCH >=100V
Brands: Infineon Technologies Corporation
Mfr.Part #: IPD050N10N5
Datasheet: IPD050N10N5 Datasheet (PDF)
Package/Case: TO-252
RoHS Status:
Stock Condition: 2660 pcs, New Original
Product Type: Transistors
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1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $4.691 | $4.691 |
| 10 | $4.093 | $40.930 |
| 30 | $3.729 | $111.870 |
| 100 | $3.422 | $342.200 |
In Stock:2660 PCS
IPD050N10N5 General Description
OptiMOS™ 5 100V power MOSFET IPD050N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices, one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
Features
- It has a drain-source voltage (VDS) rating of 100V.
- It can handle a continuous drain current (ID) of 50A.
- It has a low on-resistance (RDS(on)) of 5 mOhm, which means it can conduct current with low power loss.
- It is designed to operate at high switching frequencies, which makes it suitable for various power electronics applications.
Application
- DC-DC converters and switching regulators
- Motor control
- Solar power inverters
- Uninterruptible power supplies (UPS)
- Battery management systems
- Electric vehicle (EV) charging stations
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| IDpuls max | 320.0 A | Mounting | SMD |
| Ptot max | 150.0 W | Package | DPAK (TO-252) |
| Polarity | N | RthJA max | 75.0 K/W |
| RthJC max | 1.0 K/W | VDS max | 100.0 V |
| RDS (on) max | 5.0 mΩ | ID max | 80.0 A |
| VGS(th) max | 3.8 V | VGS(th) min | 2.2 V |
| Operating Temperature max | 175.0 °C |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the IPD050N10N5 component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : IRF3710ZPBF
Brands :
Package : TO-220AB
Description : N CHANNEL MOSFET, 100V, 59A, TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:59A, Drain Source Voltage Vds:100V, On Resistance Rds(on):18mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V
Part Number : IRFP260NPBF
Brands :
Package : TO-247AC
Description : MOSFET MOSFT 200V 49A 40mOhm 156nCAC
Part Number : FDPF50N06
Brands :
Package :
Description :
Part Number : RFP50N06
Brands :
Package : TO-220AB
Description : N CHANNEL MOSFET, 60V, 50A, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:60V, On Resistance Rds(on):22mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Product Range:-
Part Number : STW50NM50N
Brands :
Package :
Description :
Part points
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The IPD050N10N5 is a power MOSFET chip developed by Infineon Technologies. It is designed for use in various power conversion applications, offering low on-resistance, high efficiency, and high reliability. Its compact size and high performance make it suitable for use in a wide range of electronic devices and systems.
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Equivalent
The equivalent products of IPD050N10N5 chip are Infineon BSC050N10NS5 and STMicroelectronics STL007PN10N5. They are both N-channel enhancement mode power MOSFETs with similar specifications and performance characteristics. -
Features
1. N-channel MOSFET transistor 2. Low on-resistance: 50 mΩ 3. 100V drain-source voltage rating 4. 5A continuous drain current 5. Suitable for high power applications such as motor control and power supplies. -
Pinout
The IPD050N10N5 has a pin count of 3 and functions as a N-channel power MOSFET transistor. It is designed for high-speed switching applications and offers a low ON resistance for efficient power management. -
Manufacturer
The manufacturer of the IPD050N10N5 is Infineon Technologies AG, a German semiconductor manufacturer. Infineon Technologies AG specializes in the development and production of semiconductor solutions for various industries, including automotive, industrial, and consumer electronics. The company is known for its high-quality, innovative products that help drive technological advancements in the market. -
Application Field
The IPD050N10N5 is a power MOSFET transistor commonly used in applications such as power supplies, motor control, and battery management systems. It is suitable for applications requiring high efficiency, low power dissipation, and high current handling capabilities. -
Package
The IPD050N10N5 chip is a MOSFET transistor packaged in a TO-252 form with a standard 3-pin configuration. It has a size of 6.7mm x 6.7mm and a thickness of 3mm.
Datasheet PDF
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