FQPF4N90C
MOSFET 900V N-Ch Q-FET advance C-Series
Brands: ON SEMICONDUCTOR
Mfr.Part #: FQPF4N90C
Datasheet: FQPF4N90C Datasheet (PDF)
Package/Case: TO-220F-3
RoHS Status:
Stock Condition: 9179 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $1.169 | $1.169 |
10 | $0.985 | $9.850 |
25 | $0.883 | $22.075 |
100 | $0.768 | $76.800 |
500 | $0.709 | $354.500 |
1000 | $0.686 | $686.000 |
In Stock:9179 PCS
FQPF4N90C General Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 4A, 900V, RDS(on) = 4.2Ω(Max.) @VGS = 10 V, ID = 2A
- Low gate charge ( Typ. 17nC)
- Low Crss ( Typ. 5.6pF)
- 100% avalanche tested
Application
- LCD TV
- LED TV
- Desktop PC
- AC-DC Merchant Power Supply - Desktop PC
Specifications
Parameter | Value | Parameter | Value |
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Source Content uid | FQPF4N90C | Pbfree Code | Yes |
Part Life Cycle Code | End Of Life | Ihs Manufacturer | ON SEMICONDUCTOR |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Manufacturer Package Code | 221AT |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | onsemi | Avalanche Energy Rating (Eas) | 570 mJ |
Case Connection | ISOLATED | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 900 V | Drain Current-Max (Abs) (ID) | 4 A |
Drain Current-Max (ID) | 4 A | Drain-source On Resistance-Max | 4.2 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 47 W | Pulsed Drain Current-Max (IDM) | 16 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FQPF4N90C chip is a power MOSFET transistor that is commonly used in power electronics applications. It has a voltage rating of 900V and a current rating of 4A, which allows it to handle high-power loads. The chip also features low on-resistance and fast switching characteristics, making it ideal for applications such as power supplies, motor control, and lighting systems.
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Equivalent
The equivalent products of the FQPF4N90C chip are FQPF4N90C-F155 and FQPF4N90C-F703. -
Features
FQPF4N90C is a MOSFET transistor. Some of its features include a high voltage rating of 900V, low on-resistance of 1.5 ohms, high current capacity, and fast switching speed. -
Pinout
The FQPF4N90C is a MOSFET transistor with three pins. The pinout is as follows: - Pin 1: Source (S) - Pin 2: Gate (G) - Pin 3: Drain (D) These pins are used for controlling the conductivity of the transistor and for connecting it to external circuits. -
Manufacturer
The manufacturer of the FQPF4N90C is Fairchild Semiconductor. Fairchild Semiconductor was a semiconductor device manufacturer specializing in power devices and integrated circuits. It was acquired by ON Semiconductor in 2016 and now operates as a subsidiary of ON Semiconductor. -
Application Field
The FQPF4N90C is a power MOSFET transistor commonly used in electronic devices that require high-power applications, such as switch-mode power supplies, motor control, and audio amplifiers. It can handle high currents and voltages, making it suitable for various industrial and consumer electronic applications. -
Package
The FQPF4N90C chip is of TO-220F package type, with a through-hole form, and its size conforms to the dimensions of the TO-220F package.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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