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FDV303N
N-Channel Digital FET 25V, 0.68A, 0.45Ω
Brands: Onsemi
Mfr.Part #: FDV303N
Datasheet: FDV303N Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 8893 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.078 | $0.390 |
| 50 | $0.062 | $3.100 |
| 150 | $0.055 | $8.250 |
| 500 | $0.050 | $25.000 |
| 3000 | $0.046 | $138.000 |
| 6000 | $0.043 | $258.000 |
In Stock:8893 PCS
FDV303N General Description
These N-Channel enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Features
- 25 V, 0.68 A continuous, 2 A Peak
- RDS(ON) = 0.45 Ω @ VGS= 4.5 V
- RDS(ON) = 0.6 Ω @ VGS= 2.7 V
- Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V
- Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
- Compact industry standard SOT-23 surface mount package
- Alternative to TN0200T and TN0201T
Application
- This product is general usage and suitable for many different applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
| Id - Continuous Drain Current | 680 mA | Rds On - Drain-Source Resistance | 450 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 650 mV |
| Qg - Gate Charge | 2.3 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 350 mW |
| Channel Mode | Enhancement | Series | FDV303N |
| Brand | onsemi / Fairchild | Configuration | Single |
| Fall Time | 8.5 ns | Forward Transconductance - Min | 1.45 S |
| Height | 1.2 mm | Length | 2.9 mm |
| Product | MOSFET Small Signals | Product Type | MOSFET |
| Rise Time | 8.5 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | MOSFET | Typical Turn-Off Delay Time | 17 ns |
| Typical Turn-On Delay Time | 3 ns | Width | 1.3 mm |
| Part # Aliases | FDV303N_NL |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDV303N is a low threshold N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in high-speed switching applications. It has a low threshold voltage making it ideal for low-voltage applications and features a compact small signal SOT-23 package. The FDV303N offers high performance and reliability for a wide range of electronic circuits.
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Equivalent
The equivalent products of the FDV303N chip are BC856B, BC856BT, BC856C, BC856CT, BC856BW, and BC856AW in SOT-523 package. These chips are general-purpose transistors with low voltage and high current capability, suitable for applications in amplification, switching, and voltage regulation circuits. -
Features
1. High gain 2. Low noise figure 3. Small signal gain 4. Wide bandwidth 5. Wide dynamic range 6. High linearity 7. High power handling 8. Low distortion 9. Surface mount package 10. Low cost -
Pinout
The FDV303N is a dual N-channel enhancement mode field-effect transistor (FET) with a pin count of 3. It functions as a low threshold voltage switch for control applications in portable equipment, battery management, and power management systems. -
Manufacturer
FDV303N is manufactured by ON Semiconductor, a global supplier of semiconductor solutions. They offer a comprehensive portfolio of energy-efficient power management, analog, sensors, logic, timing, connectivity, discrete, SoC, and custom devices for a wide range of industries including automotive, communications, consumer, industrial, medical, and aerospace. -
Application Field
- Industrial process control - Medical instrumentation - Automotive applications - Consumer electronics - Robotics - Home automation - Power management systems - Battery charging and management systems - Solar power systems - Temperature sensing and control systems -
Package
The FDV303N chip comes in a SOT-23 package, with a form of surface mount and a size of 2.9mm x 1.3mm x 1.0mm.
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