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FDS4559
Dual-channel MOSFET with N-channel and P-channel configurations, rated for 60 volts and 4
Brands: Onsemi
Mfr.Part #: FDS4559
Datasheet: FDS4559 Datasheet (PDF)
Package/Case: SOIC-8
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.308 | $1.540 |
| 50 | $0.247 | $12.350 |
| 150 | $0.221 | $33.150 |
| 500 | $0.189 | $94.500 |
| 3000 | $0.174 | $522.000 |
| 6000 | $0.166 | $996.000 |
In Stock:9458 PCS
FDS4559 General Description
This complementary MOSFET device is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- Q1 N-Channel
4.5A, 60V
Max. RDS(on) = 55 mΩ at VGS = 10 V,
Max. RDS(on) = 75 mΩ at VGS = 4.5 V - Q2 P-Channel
-3.5A, -60V
Max. RDS(on) = 105 mΩ at VGS = -10 V,
Max. RDS(on) = 135 mΩ at VGS = -4.5 V
Application
- This product is general usage and suitable for many different applications.
- DC/DC Converters
- Power Management
- LCD Backlight Inverter
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 | Transistor Polarity | N-Channel, P-Channel |
| Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 4.5 A, 3.5 A | Rds On - Drain-Source Resistance | 55 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V, 3 V |
| Qg - Gate Charge | 18 nC, 21 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 2 W |
| Channel Mode | Enhancement | Tradename | PowerTrench |
| Series | FDS4559 | Brand | onsemi / Fairchild |
| Configuration | Dual | Fall Time | 6 ns, 12 ns |
| Forward Transconductance - Min | 14 S, 9 S | Height | 1.75 mm |
| Length | 4.9 mm | Product Type | MOSFET |
| Rise Time | 8 ns, 10 ns | Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel, 1 P-Channel |
| Type | MOSFET | Typical Turn-Off Delay Time | 19 ns, 19 ns |
| Typical Turn-On Delay Time | 11 ns, 7 ns | Width | 3.9 mm |
| Part # Aliases | FDS4559_NL |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDS4559 is a power MOSFET chip designed for low voltage applications. It offers high performance and efficiency with a low on-resistance. The chip is commonly utilized in various electronic devices and circuits where low voltage switching is required. Its compact size and robustness make it suitable for a wide range of applications in industries such as automotive, consumer electronics, and industrial automation.
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Equivalent
There is no direct equivalent for the FDS4559 chip. However, there are similar products available, such as the FDS4559A, FDS4559B, and FDS4559C, which have slight variations in their specifications but can perform similar functions. -
Features
The FDS4559 is a MOSFET transistor with a N-Channel type and a Drain-Source Voltage (Vds) rating of 30V. It has a continuous Drain Current (Id) of 1.8A, low on-resistance (Rds(on)), and a small package outline. -
Pinout
The FDS4559 is a dual N-channel MOSFET with a SOT-23 package. It has 3 pins: drain (D), source (S), and gate (G). Drain pin is connected to the load, source pin is connected to the ground, and gate pin is used to control the switching of the MOSFET. -
Manufacturer
The FDS4559 is manufactured by Fairchild Semiconductor Corporation. It is a company based in the United States that specializes in the design, development, and production of power management and semiconductor solutions for various industries and applications. -
Application Field
The FDS4559 is a dual N-channel MOSFET commonly used in power management applications, such as DC-DC converters and power switches in portable devices, laptops, and automotive electronics. It is also suitable for various other low voltage applications where efficient power handling is required. -
Package
The FDS4559 chip is a surface-mount device (SMD) with a dual MOSFET (metal-oxide-semiconductor field-effect transistor) configuration. It is available in a small form factor, specifically a PowerTrench® SO-8 package, which measures approximately 5.3mm x 6.2mm.
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