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FDN359AN
MOSFET SSOT-3 N-CH 30V
Brands: ONSEMI
Mfr.Part #: FDN359AN
Datasheet: FDN359AN Datasheet (PDF)
Package/Case: SOT-23-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 6393 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
- 2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V.
- Very Fast Switching
- Low Gate Charge (5nC typical).
- High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability
Application
- This product is general usage and suitable for many different applications.
- Battery Powered Circuits
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | FDN359AN | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Package Description | SUPERSOT-3 | Manufacturer Package Code | 527AG |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 4 Weeks | Samacsys Manufacturer | onsemi |
| Additional Feature | LOGIC LEVEL COMPATIBLE | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 2.7 A |
| Drain-source On Resistance-Max | 0.046 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 0.5 W |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form | GULL WING |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDN359AN is a power MOSFET chip designed for low voltage, high-speed applications. It features a 40V maximum drain-source voltage and a low on-resistance of 0.115 ohms. The chip is commonly used in power management, motor control, and battery protection applications.
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Equivalent
Equivalent products to the FDN359AN chip include the FDN359N, FDN340P, and BSS138. These chips are all N-channel MOSFET transistors commonly used in low-voltage applications like load switching and battery management. Always refer to datasheets for specific details and compatibility. -
Features
1. N-channel MOSFET 2. Enhancement mode 3. Compact and high-performance design 4. Low on-resistance 5. Fast switching speed 6. Reliable and durable 7. Suitable for various applications such as power management and motor control. -
Pinout
The FDN359AN is a MOSFET transistor. It has 3 pins: gate (G), drain (D), and source (S). It's commonly used for switching applications in low-voltage circuits. The pinout and function are typically represented as G-D-S. -
Manufacturer
The FDN359AN is a MOSFET transistor manufactured by Fairchild Semiconductor. Fairchild Semiconductor is a company that produces semiconductor technologies for a variety of industries including automotive, consumer electronics, data communications, and industrial applications. They are known for their expertise in power management and packaging technologies. Fairchild Semiconductor was founded in 1957 and is headquartered in San Jose, California. -
Application Field
The FDN359AN is commonly used as a power switch in applications like battery management systems, portable devices, and load switching circuits. Its low on-resistance and small package make it suitable for space-constrained designs. Additionally, it finds utility in power management for mobile devices and consumer electronics due to its efficiency and compactness. -
Package
The FDN359AN chip is available in a surface mount package type, specifically a SOIC-8 form. The size of the chip is 4.90mm x 3.91mm x 1.50mm.
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