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FDN327N
This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
Brands: Onsemi
Mfr.Part #: FDN327N
Datasheet: FDN327N Datasheet (PDF)
Package/Case: SSOT-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomFDN327N General Description
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 120 / Gate-Source Voltage V = 8 / Fall Time ns = 4 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 29 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
Features
- 2 A, 20 V
- RDS(ON) = 70 mΩ @ VGS = 4.5 V
- RDS(ON) = 80 mΩ @ VGS = 2.5 V
- RDS(ON) = 120 mΩ @ VGS = 1.8 V
- Low gate charge
- Fast switching speed
- High performance trench technology for extremely low RDS(on)
Application
- This product is general usage and suitable for many different applications.
- Load Switch
- Battery Protection
- Power Management
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SSOT-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 2 A | Rds On - Drain-Source Resistance | 40 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 6.3 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 500 mW |
| Channel Mode | Enhancement | Tradename | PowerTrench |
| Series | FDN327N | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 6.5 ns |
| Forward Transconductance - Min | 11 S | Height | 1.12 mm |
| Length | 2.9 mm | Product | MOSFET Small Signals |
| Product Type | MOSFET | Rise Time | 6.5 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | MOSFET |
| Typical Turn-Off Delay Time | 14 ns | Typical Turn-On Delay Time | 6 ns |
| Width | 1.4 mm | Part # Aliases | FDN327N_NL |
| Unit Weight | 0.001058 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDN327N chip is a field-effect transistor (FET) commonly used in electronic circuits. It features a low threshold voltage, making it suitable for low-voltage applications. With its small footprint and low on-resistance, it's often utilized in power management and switching circuits in various electronic devices, offering efficient performance in a compact package.
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Equivalent
Some equivalent products of the FDN327N chip are IRFD9110, IRF7460, PMF4900, and SI2301. These chips are MOSFET transistors with similar electrical specifications and applications, making them suitable replacements for the FDN327N in various circuits. -
Features
1. N-channel MOSFET transistor 2. Maximum voltage of 100V 3. Maximum continuous drain current of 7A 4. Low on-resistance of 88mOhm 5. Low gate charge 6. Ideal for use in power management applications -
Pinout
The FDN327N is a single N-channel MOSFET with a SOT-23 package. It has 3 pins: gate (G), drain (D), and source (S). The gate pin controls the flow of current between the drain and source pins when a voltage is applied. -
Manufacturer
The manufacturer of the FDN327N is Fairchild Semiconductor. Fairchild Semiconductor is a global company that designs, manufactures, and supplies power semiconductors, analog and mixed-signal integrated circuits, and optoelectronics components for various industries such as automotive, consumer electronics, and industrial applications. -
Application Field
The FDN327N is a power MOSFET transistor commonly used in applications requiring high efficiency power switching, such as battery management systems, motor control, LED lighting, and voltage regulation circuits. Its low on-resistance and fast switching characteristics make it suitable for various power management tasks in automotive, industrial, and consumer electronics. -
Package
The FDN327N chip comes in a small outline package type known as D-PAK. It is in a surface-mount form with a size of 10mm x 6mm x 2.3mm. The package consists of three pins for connecting to a circuit.
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