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NXP FDH45N50F
Trans MOSFET N-CH 500V 45A 3-Pin(3+Tab) TO-247 Rail
Brands: NXP Semiconductor
Mfr.Part #: FDH45N50F
Datasheet: FDH45N50F Datasheet (PDF)
Package/Case: TO-247
Product Type: Transistors
RoHS Status:
Stock Condition: 2095 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomFDH45N50F General Description
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
- RDS(on) = 120mΩ ( Max.)@ VGS = 10V, ID = 22.5A
- Low gate charge ( Typ. 105nC)
- Low Crss ( Typ. 62pF)
- 100% avalanche tested
- Improved dv/dt capability
Application
- This product is general usage and suitable for many different applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 500 V | Id - Continuous Drain Current: | 45 A |
| Rds On - Drain-Source Resistance: | 120 mOhms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 625 W | Channel Mode: | Enhancement |
| Series: | UniFET | Packaging: | Tube |
| Brand: | onsemi / Fairchild | Configuration: | Single |
| Fall Time: | 245 ns | Forward Transconductance - Min: | 49 S |
| Height: | 20.82 mm | Length: | 15.87 mm |
| Product Type: | MOSFET | Rise Time: | 500 ns |
| Factory Pack Quantity: | 450 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Type: | MOSFET, FRFET |
| Typical Turn-Off Delay Time: | 215 ns | Typical Turn-On Delay Time: | 140 ns |
| Width: | 4.82 mm | Unit Weight: | 0.211644 oz |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | UniFET | feature-configuration | Single |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 500 |
| feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | 5 |
| feature-maximum-continuous-drain-current-a | 45 | feature-maximum-drain-source-resistance-mohm | 120@10V |
| feature-typical-gate-charge-vgs-nc | 105@10V | feature-typical-gate-charge-10v-nc | 105 |
| feature-typical-input-capacitance-vds-pf | 5100@25V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 625000 | feature-packaging | Rail |
| feature-rad-hard | feature-pin-count | 3 | |
| feature-supplier-package | TO-247 | feature-standard-package-name1 | TO |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | No |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the FDH45N50F component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : IRFP460APBF
Brands :
Package :
Description :
Part Number : STP55NF06L
Brands :
Package : TO-220
Description : N CHANNEL MOSFET, 60V, 55A,Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.014ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, No. of Pins:3 Power MOSFET
Part Number : IXFN45N50Q2
Brands :
Package :
Description :
Part Number : AOB45N50
Brands :
Package :
Description :
Part Number : HUF76132G3
Brands :
Package :
Description :
Part points
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FDH45N50F is a power MOSFET semiconductor chip designed for high voltage and high current applications. It offers low on-resistance and efficient power handling capability. The chip is commonly used in switching power supplies, motor drive circuits, and other high power electronics.
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Features
The FDH45N50F is a Power MOSFET with a drain current rating of 45A and a breakdown voltage of 500V. It has a low on-resistance, making it suitable for high-power applications. The device also features a fast switching speed and low gate charge, making it ideal for use in high-frequency switching circuits. -
Pinout
The FDH45N50F is a power MOSFET with a pin count of 3, consisting of a gate pin, a drain pin, and a source pin. It is commonly used for high power switching applications in various electronic devices. -
Manufacturer
The manufacturer of the FDH45N50F is Fairchild Semiconductor. It is a company that designs, manufactures, and sells power management and analog & mixed-signal semiconductor solutions for various industries such as automotive, industrial, mobile, and computing. -
Application Field
The FDH45N50F is a power MOSFET transistor typically used in high-voltage and high-current applications. It can be found in areas such as power supplies, motor control circuits, inverters, and other power electronics systems that require efficient switching and high power handling capabilities. -
Package
The FDH45N50F chip is packaged in a TO-247 form.
Datasheet PDF
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