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Microchip DN3135K1-G
N-Channel 350 V 72mA (Tj) 360mW (Ta) Surface Mount SOT-23-3
Brands: Microchip Technology, Inc
Mfr.Part #: DN3135K1-G
Datasheet: DN3135K1-G Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 3019 pcs, New Original
Product Type: Transistors
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1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.391 | $0.391 |
| 10 | $0.318 | $3.180 |
| 30 | $0.286 | $8.580 |
| 100 | $0.248 | $24.800 |
| 500 | $0.231 | $115.500 |
| 1000 | $0.220 | $220.000 |
In Stock:3019 PCS
DN3135K1-G General Description
DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
- High input impedance
- Low input capacitance
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Microchip | Product Category: | MOSFET |
| RoHS: | Y | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SOT-23-3 |
| Number of Channels: | 1 Channel | Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 350 V | Id - Continuous Drain Current: | 72 mA |
| Rds On - Drain-Source Resistance: | 35 Ohms | Vgs - Gate-Source Voltage: | 20 V |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 360 mW | Configuration: | Single |
| Channel Mode: | Depletion | Packaging: | Reel |
| Height: | 0.95 mm | Length: | 2.9 mm |
| Product: | MOSFET Small Signal | Transistor Type: | 1 N-Channel |
| Type: | FET | Width: | 1.3 mm |
| Brand: | Microchip Technology | Forward Transconductance - Min: | 140 mS |
| Fall Time: | 20 ns | Product Type: | MOSFET |
| Rise Time: | 15 ns | Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs | Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 10 ns | Unit Weight: | 0.000282 oz |
| Tags | DN3135K, DN3135, DN313, DN31, DN3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The DN3135K1-G chip is a semiconductor component designed for power management applications. It integrates various circuitry and functions to regulate and control voltage levels within electronic devices efficiently. The chip operates at high frequency and provides protection features for enhanced reliability. With its compact and versatile design, the DN3135K1-G chip is widely used in a range of electronic devices for efficient power management.
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Features
DN3135K1-G is a thyristor module that features a high voltage capability of up to 1600V, high blocking voltage, high surge capabilities, and low power losses. It is designed to provide efficient power conversion and control in various applications, including motor control, industrial drives, and power supplies. -
Pinout
The DN3135K1-G is a dual N-channel enhancement mode MOSFET. It has three pins: Gate (G), Drain (D), and Source (S). The pin count is 3, and the functions of these pins are to control the flow of current between the Drain and Source terminals by applying voltage to the Gate terminal. -
Manufacturer
The manufacturer of the DN3135K1-G is a company called Texas Instruments. It is a leading semiconductor and electronics component manufacturer, specializing in various products including integrated circuits, microcontrollers, processors, and other digital and analog devices. -
Application Field
The DN3135K1-G is a high voltage, high-side power switch specifically designed for automotive applications. It is commonly used in automotive safety applications such as airbag control modules, seatbelt pre-tensioners, and crash sensors. Its compact size, robust design, and high voltage capability make it suitable for various automotive safety systems. -
Package
The DN3135K1-G chip is packaged in a SOT-23 package type. It is in a small form factor with dimensions of approximately 3.0mm x 1.3mm x 1.1mm.
Datasheet PDF
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