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ON BUV22G

Bipolar Transistors - BJT 40A 250V 250W NPN

ISO14001 ISO9001 DUNS

Brands: ON Semiconductor, LLC

Mfr.Part #: BUV22G

Datasheet: BUV22G Datasheet (PDF)

Package/Case: TO-204-2

Product Type: Transistors

RoHS Status:

Stock Condition: 2377 pcs, New Original

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Quick Quote

Please submit RFQ for BUV22G or email to us: Email: [email protected], we will contact you within 12 hours.

BUV22G General Description

TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 8MHz; Power Dissipation Pd: 250W; DC Collector Current: 40A; DC Current Gain hFE: 8hFE; Transistor Case Style: TO-3; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 1.5V; Current Ic Continuous a Max: 40A; Gain Bandwidth ft Typ: 8MHz; Hfe Min: 10; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Termination Type: Through Hole

buv22g

Features

  • High DC current gain: HFE min. = 20 at IC = 10 A
  • Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A
  • Very fast switching times:
    TF max. = 0.35 ms at IC = 20 A
  • Pb-Free Package is Available
buv22g

Application

ONSEMI

Specifications

Parameter Value Parameter Value
Source Content uid BUV22G Pbfree Code Yes
Part Life Cycle Code Active Ihs Manufacturer ONSEMI
Part Package Code TO-204 (TO-3) Package Description CASE 197A-05, TO-3, 2 PIN
Pin Count 2 Manufacturer Package Code 197A-05
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks, 1 Day Samacsys Manufacturer onsemi
Case Connection COLLECTOR Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 250 V Configuration SINGLE
DC Current Gain-Min (hFE) 10 JEDEC-95 Code TO-204AE
JESD-30 Code O-MBFM-P2 JESD-609 Code e1
Number of Elements 1 Number of Terminals 2
Operating Temperature-Max 200 °C Package Body Material METAL
Package Shape ROUND Package Style FLANGE MOUNT
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 250 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN SILVER COPPER Terminal Form PIN/PEG
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 8 MHz
feature-type NPN feature-category Bipolar Power
feature-material Si feature-configuration Single
feature-number-of-elements-per-chip 1 feature-maximum-collector-base-voltage-v 300
feature-maximum-collector-emitter-voltage-v 250 feature-maximum-emitter-base-voltage-v 7
feature-maximum-dc-collector-current-a 40 feature-minimum-dc-current-gain 20@10mA@4V|10@20A@4V
feature-maximum-power-dissipation-mw 250000 feature-maximum-transition-frequency-mhz 8(Min)
feature-packaging Tray feature-rad-hard
feature-pin-count 3 feature-supplier-package TO-204
feature-standard-package-name1 TO feature-cecc-qualified No
feature-esd-protection feature-military No
feature-aec-qualified No feature-aec-qualified-number
feature-auto-motive No feature-p-pap No
feature-eccn-code EAR99 feature-svhc Yes
feature-svhc-exceeds-threshold Yes

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The BUV22G chip is a component used in power systems applications. It is a high-power N-channel MOSFET that provides efficient switching capabilities. The chip features low on-resistance and fast switching speed, making it suitable for applications requiring high power and reliable performance. Its compact design and thermal efficiency make it ideal for use in various power system designs.
  • Features

    The features of BUV22G include a high power density, low forward voltage drop, high efficiency, and low leakage current. It also has a fast switching speed, high surge capability, and is suitable for use in high-frequency applications.
  • Pinout

    The BUV22G is not a specific electronic component or device. Therefore, there is no defined pin count or function for it.
  • Application Field

    The BUV22G is a gallium nitride (GaN) transistor that is commonly used in various applications such as power converters, wireless charging systems, telecom infrastructure, and satellite communications. It offers improved efficiency, higher power density, and greater ruggedness compared to traditional silicon-based transistors, making it suitable for applications that require high levels of power and performance.
  • Package

    The BUV22G chip has a TO-3P package type, a discrete transistor form, and a size of TO-3P-3.

Datasheet PDF

Preliminary Specification BUV22G PDF Download

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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