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BSM100GB120DN2
IGBT Module Half Bridge 1200 V 150 A 800 W Chassis Mount Module
Brands: INFINEON TECHNOLOGIES AG
Mfr.Part #: BSM100GB120DN2
Datasheet: BSM100GB120DN2 Datasheet (PDF)
Package/Case: Half Bridge2
RoHS Status:
Stock Condition: 5606 pcs, New Original
Product Type: IGBT Modules
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $359.746 | $359.746 |
| 200 | $139.218 | $27843.600 |
| 500 | $134.324 | $67162.000 |
| 1000 | $131.907 | $131907.000 |
In Stock:5606 PCS
BSM100GB120DN2 General Description
IGBT Module Half Bridge 1200 V 150 A 800 W Chassis Mount Module
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | BSM100GB120DN2 | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | End Of Life |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Package Description | FLANGE MOUNT, R-XUFM-X7 |
| Pin Count | 7 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
| Samacsys Manufacturer | Infineon | Case Connection | ISOLATED |
| Collector Current-Max (IC) | 150 A | Collector-Emitter Voltage-Max | 1200 V |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | Gate-Emitter Voltage-Max | 20 V |
| JESD-30 Code | R-XUFM-X7 | Number of Elements | 2 |
| Number of Terminals | 7 | Operating Temperature-Max | 150 °C |
| Package Body Material | UNSPECIFIED | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 800 W |
| Qualification Status | Not Qualified | Surface Mount | NO |
| Terminal Form | UNSPECIFIED | Terminal Position | UPPER |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 470 ns |
| Turn-on Time-Nom (ton) | 210 ns |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSM100GB120DN2 is a high-power insulated gate bipolar transistor (IGBT) chip designed for use in various power electronics applications. With a voltage rating of 1200 V and current rating of 100 A, this chip offers high performance and efficiency in demanding power systems. It is commonly used in industrial drives, wind turbines, and power supplies.
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Equivalent
Some equivalent products of the BSM100GB120DN2 chip include the BSM75GB120DN2 and BSM150GB120DN2. These chips offer similar power and performance capabilities for high-power applications such as motor control and renewable energy systems. -
Features
1. 1200V/100A IGBT module 2. Dual NPT IGBT chips in parallel 3. Isolated baseplate for easy mounting 4. Low inductance design for high switching frequency 5. Integrated soft recovery anti-parallel diodes 6. Robust and reliable module for industrial applications -
Pinout
The BSM100GB120DN2 is a dual IGBT module with a pin count of 14. It is commonly used in power electronics applications. The functions of this module include switching and controlling high power loads in industrial and commercial equipment. -
Manufacturer
BSM100GB120DN2 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer specializing in power semiconductors and embedded control systems. Infineon is a multinational company that produces a wide range of products for various industries including automotive, industrial, and consumer electronics. -
Application Field
BSM100GB120DN2 is commonly used in high power applications such as industrial drives, wind turbines, and solar inverters due to its low switching losses and high reliability. It is also suitable for applications requiring high efficiency and reduced energy consumption, such as electric vehicles and power supplies. -
Package
The BSM100GB120DN2 chip is a IGBT module with 3 pins. It comes in a module package type with a standard form factor. The chip has a size of 100mm x 140mm.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products
