Infineon BSC190N15NS3GATMA1
Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP T/R
Brands: Infineon Technologies Corporation
Mfr.Part #: BSC190N15NS3GATMA1
Datasheet: BSC190N15NS3GATMA1 Datasheet (PDF)
Package/Case: PG-TDSON-8
Product Type: Transistors
BSC190N15NS3GATMA1 General Description
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Features
- Excellent switching performance
- World’s lowest R DS(on)
- Very low Q g and Q gd
- Excellent gate charge x R DS(on) product (FOM)
- RoHS compliant-halogen free
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
Application
- Synchronous rectification for AC-DC SMPS
- Isolated DC-DC converters (telecom and datacom systems)
- Or-ing switches and circuit breakers in 48V systems
- Class D audio amplifiers
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
RHoS | yes | PBFree | yes |
HalogenFree | yes |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSC190N15NS3GATMA1 is a power MOSFET transistor chip designed for high-power applications in automotive and industrial settings. It features a low on-resistance and high current-carrying capability, making it suitable for various power switching and control purposes. This chip offers reliable performance and efficient power handling in demanding environments.
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Equivalent
The equivalent products of the BSC190N15NS3GATMA1 chip are IRFP064NPBF, STP26NM60N, IXFN34N60, and IPP60R130CFD. These chips are also power MOSFET transistors that can be used as alternatives to the BSC190N15NS3GATMA1 in various applications. -
Features
BSC190N15NS3GATMA1 is a 1500V SiC diode with low leakage current, low forward voltage, and fast switching speed. It has a high surge current capability and excellent thermal performance. The device is suitable for use in high temperature and high power applications such as power supplies, solar inverters, and electric vehicles. -
Pinout
The BSC190N15NS3GATMA1 is a MOSFET with a TO-263-3 package. It has a pin count of 3, with one pin for the source (S), one pin for the gate (G), and one pin for the drain (D). The function of this MOSFET is to control the flow of current between the drain and source terminals. -
Manufacturer
The BSC190N15NS3GATMA1 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer specializing in power and sensor solutions for automotive, industrial, and consumer electronics applications. They are known for their innovative products and technologies in areas such as power management, automotive electronics, and renewable energy. -
Application Field
The BSC190N15NS3GATMA1 is a power MOSFET transistor suitable for use in applications such as motor control, power supplies, and inverters. Its high current handling capabilities and low on-resistance make it ideal for applications requiring high efficiency and power. -
Package
The BSC190N15NS3GATMA1 is a Power-SO8 package with a size of 5mm x 6mm. It is a single N-channel MOSFET chip with a voltage rating of 150V and a current rating of 190A.
Datasheet PDF
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