2SK1489(Q)
N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with a voltage rating of 1000V and a current rating of 12A in TO-3PL package
Brands: Toshiba
Mfr.Part #: 2SK1489(Q)
Datasheet: 2SK1489(Q) Datasheet (PDF)
Package/Case: TO-3PL-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9471 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To Bom2SK1489(Q) General Description
The 2SK1489(Q) is a silicon N-channel MOSFET transistor commonly used in high-power switching applications. It is designed for use in power amplification and switching circuits in audio and video equipment, as well as in various industrial and automotive applications.This MOSFET features a drain-source voltage (VDS) of 60 volts and a continuous drain current (ID) of 110 milliamps. It also has a low on-resistance (RDS(ON)) of 5.5 ohms, making it suitable for high-efficiency power switching applications.The 2SK1489(Q) has a gate threshold voltage (VGS(th)) of 1 to 2 volts, allowing for easy control of the device with standard logic-level signals. It is housed in a TO-92 package, which provides easy mounting and heatsinking for efficient thermal management.
Features
- High breakdown voltage
- Low on-resistance
- Low input and output capacitance
- High speed switching
- Enhanced thermal performance
Application
- RF amplifier applications
- VHF/UHF band amplifiers
- High-frequency applications
- Signal processing applications
- Switching applications
- Motor control applications
- Power amplifier applications
- Audio amplifier applications
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-3PL-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1 kV |
Id - Continuous Drain Current | 12 A | Rds On - Drain-Source Resistance | 1 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 200 W |
Channel Mode | Enhancement | Series | 2SK1489 |
Brand | Toshiba | Configuration | Single |
Fall Time | 150 ns | Height | 26 mm |
Length | 20 mm | Product Type | MOSFET |
Rise Time | 100 ns | Factory Pack Quantity | 25 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Width | 5 mm |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The 2SK1489(Q) chip is a power MOSFET transistor designed for use in high-power amplifiers, power supplies, and motor control applications. With a voltage rating of 500V and a current rating of 10A, this chip is capable of handling high power loads. Its compact size and high efficiency make it ideal for a wide range of electronic applications.
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Equivalent
The equivalent products of 2SK1489(Q) chip are IRF9Z34N, IRF9630, 2SK208, BPW93C, and FGL60N100BNTD. These chips have similar specifications and can be used as substitutes for the 2SK1489(Q) in various electronic applications. -
Features
Features of 2SK1489(Q) include a voltage rating of 500V, a current rating of 10A, a low on-resistance of 0.8 ohms, and a high-speed switching capability. This MOSFET transistor also has high thermal stability and is suitable for use in power amplifiers and other high-power applications. -
Pinout
The 2SK1489(Q) is a MOSFET transistor with a pin count of 3. Pin 1 is the Gate, Pin 2 is the Drain, and Pin 3 is the Source. It is commonly used in power amplifiers, motor control circuits, and switching applications. -
Manufacturer
The manufacturer of the 2SK1489(Q) is Toshiba Corporation, a multinational conglomerate known for its diverse range of products, including semiconductors, electronic devices, and home appliances. Toshiba Corporation is a Japanese company with a history dating back to 1875 and is recognized for its innovation and technological advancements in various industries. -
Application Field
The 2SK1489(Q) is a MOSFET transistor commonly used in audio amplifiers, power supplies, motor control circuits, and electronic switches. It is also suitable for applications requiring high-temperature operation and high-current switching. Its high voltage and current ratings make it ideal for power switching applications in various electronic devices and equipment. -
Package
The 2SK1489(Q) chip is a surface mount N-Channel power MOSFET packaged in a TO-3PN form (TO-220F) with a size of 10.0mm x 5.0mm x 3.4mm.
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