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2SK1489(Q)

N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with a voltage rating of 1000V and a current rating of 12A in TO-3PL package

ISO14001 ISO9001 DUNS

Brands: Toshiba

Mfr.Part #: 2SK1489(Q)

Datasheet: 2SK1489(Q) Datasheet (PDF)

Package/Case: TO-3PL-3

Product Type: MOSFET

RoHS Status:

Stock Condition: 9471 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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2SK1489(Q) General Description

The 2SK1489(Q) is a silicon N-channel MOSFET transistor commonly used in high-power switching applications. It is designed for use in power amplification and switching circuits in audio and video equipment, as well as in various industrial and automotive applications.This MOSFET features a drain-source voltage (VDS) of 60 volts and a continuous drain current (ID) of 110 milliamps. It also has a low on-resistance (RDS(ON)) of 5.5 ohms, making it suitable for high-efficiency power switching applications.The 2SK1489(Q) has a gate threshold voltage (VGS(th)) of 1 to 2 volts, allowing for easy control of the device with standard logic-level signals. It is housed in a TO-92 package, which provides easy mounting and heatsinking for efficient thermal management.

Features

  • High breakdown voltage
  • Low on-resistance
  • Low input and output capacitance
  • High speed switching
  • Enhanced thermal performance

Application

  • RF amplifier applications
  • VHF/UHF band amplifiers
  • High-frequency applications
  • Signal processing applications
  • Switching applications
  • Motor control applications
  • Power amplifier applications
  • Audio amplifier applications

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-3PL-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1 kV
Id - Continuous Drain Current 12 A Rds On - Drain-Source Resistance 1 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 200 W
Channel Mode Enhancement Series 2SK1489
Brand Toshiba Configuration Single
Fall Time 150 ns Height 26 mm
Length 20 mm Product Type MOSFET
Rise Time 100 ns Factory Pack Quantity 25
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 5 mm

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The 2SK1489(Q) chip is a power MOSFET transistor designed for use in high-power amplifiers, power supplies, and motor control applications. With a voltage rating of 500V and a current rating of 10A, this chip is capable of handling high power loads. Its compact size and high efficiency make it ideal for a wide range of electronic applications.
  • Equivalent

    The equivalent products of 2SK1489(Q) chip are IRF9Z34N, IRF9630, 2SK208, BPW93C, and FGL60N100BNTD. These chips have similar specifications and can be used as substitutes for the 2SK1489(Q) in various electronic applications.
  • Features

    Features of 2SK1489(Q) include a voltage rating of 500V, a current rating of 10A, a low on-resistance of 0.8 ohms, and a high-speed switching capability. This MOSFET transistor also has high thermal stability and is suitable for use in power amplifiers and other high-power applications.
  • Pinout

    The 2SK1489(Q) is a MOSFET transistor with a pin count of 3. Pin 1 is the Gate, Pin 2 is the Drain, and Pin 3 is the Source. It is commonly used in power amplifiers, motor control circuits, and switching applications.
  • Manufacturer

    The manufacturer of the 2SK1489(Q) is Toshiba Corporation, a multinational conglomerate known for its diverse range of products, including semiconductors, electronic devices, and home appliances. Toshiba Corporation is a Japanese company with a history dating back to 1875 and is recognized for its innovation and technological advancements in various industries.
  • Application Field

    The 2SK1489(Q) is a MOSFET transistor commonly used in audio amplifiers, power supplies, motor control circuits, and electronic switches. It is also suitable for applications requiring high-temperature operation and high-current switching. Its high voltage and current ratings make it ideal for power switching applications in various electronic devices and equipment.
  • Package

    The 2SK1489(Q) chip is a surface mount N-Channel power MOSFET packaged in a TO-3PN form (TO-220F) with a size of 10.0mm x 5.0mm x 3.4mm.

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