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ON 2SA2016-TD-E

PNP Bipolar Junction Transistors capable of handling 7A current and 50V voltage

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: 2SA2016-TD-E

Datasheet: 2SA2016-TD-E Datasheet (PDF)

Package/Case: SOT-89 , PCP-1

Product Type: Transistors

RoHS Status:

Stock Condition: 2960 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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Quick Quote

Please submit RFQ for 2SA2016-TD-E or email to us: Email: [email protected], we will contact you within 12 hours.

2SA2016-TD-E General Description

Bipolar (BJT) Transistor PNP 50 V 7 A 330MHz 3.5 W Surface Mount PCP

2sa2016-td-e

Features

  • Adoption of FBET and MBIT processes
  • Large current capacity
  • Low collector-to-emitter saturation voltage
  • High-speed switching
  • Ultrasmall package facilitales miniaturization in end products
  • High allowable power dissipation

Application

  • Relay drivers, Lamp drivers, Motor drivers, Flash

Specifications

Parameter Value Parameter Value
Status Active Compliance PbAHP
Package Type SOT-89 / PCP-1 Case Outline 419AU
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1000
ON Target Y Polarity PNP
Type Low VCE(sat) VCE(sat) Max (V) 0.39
IC Cont. (A) 7 VCEO Min (V) 50
VCBO (V) 100 VEBO (V) 6
VBE(sat) (V) 0.83 hFE Min 200
hFE Max 560 fT Min (MHz) 290
PTM Max (W) 1.3

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The 2SA2016-TD-E chip is an electronic component used in various applications. It is a PNP silicon transistor with a maximum collector current of 100 mA and a maximum power dissipation of 500 mW. The chip offers high frequency performance, low noise, and low distortion characteristics, making it suitable for use in audio and general-purpose amplifiers.
  • Features

    The features of 2SA2016-TD-E include a low VCE(sat) of 0.2V, a high hFE of 2000, a collector current (IC) of 0.05A, and a power dissipation (PD) of 0.15W. It is a small signal PNP bipolar transistor commonly used in low voltage amplifier applications.
  • Pinout

    The 2SA2016-TD-E is a bipolar transistor. It has a pin count of 3 and the function of each pin is as follows: 1. Collector (C) 2. Base (B) 3. Emitter (E) It is commonly used in audio amplifier applications and other electronic circuits requiring high current gain and low noise performance.
  • Manufacturer

    The manufacturer of the 2SA2016-TD-E is Toshiba. Toshiba is a multinational conglomerate company that specializes in various products and services, including electronics, semiconductors, and power systems.
  • Application Field

    The 2SA2016-TD-E is a general-purpose NPN bipolar junction transistor that can be used in a wide range of circuits and applications. Some common application areas include audio amplifiers, switching circuits, voltage regulators, and general-purpose amplification where low noise and high current capability are required.
  • Package

    The package type of the 2SA2016-TD-E chip is a TO-252G (DPAK) package. It has a form of SMD (Surface Mount Device) and a size of 6.86mm x 6.86mm x 2.4mm.

Datasheet PDF

Preliminary Specification 2SA2016-TD-E PDF Download

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  • Product

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  • quantity

    Minimum order quantity starts from 1pcs.

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    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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