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ON 2SC4135T-E
(-)100V (-)2A Bipolar Transistor designed for efficient high-voltage switching applications with low VCE(sat)
Brands: Onsemi
Mfr.Part #: 2SC4135T-E
Datasheet: 2SC4135T-E Datasheet (PDF)
Package/Case: IPAK , TP
RoHS Status:
Stock Condition: 3314 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.397 | $0.397 |
| 200 | $0.153 | $30.600 |
| 500 | $0.148 | $74.000 |
| 1000 | $0.146 | $146.000 |
In Stock:3314 PCS
2SC4135T-E General Description
Bipolar (BJT) Transistor NPN 100 V 2 A 120MHz 1 W Through Hole TP
Features
- Adoption of FBET, MBIT processes
- High breakdown voltage and large current capacity
- Fast switching speed
- Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact
Application
- Power supplies, relay derivers, lamp drivers
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Status | Last Shipments | Compliance | PbAHP |
| Package Type | IPAK / TP | Case Outline | 369AJ |
| MSL Type | NA | MSL Temp (°C) | 0 |
| Container Type | BLKBG | Container Qty. | 500 |
| ON Target | N | Polarity | NPN |
| Type | Low VCE(sat) | VCE(sat) Max (V) | 0.4 |
| IC Cont. (A) | 2 | VCEO Min (V) | 100 |
| VCBO (V) | 120 | VEBO (V) | 6 |
| VBE(sat) (V) | 0.85 | hFE Min | 200 |
| hFE Max | 400 | PTM Max (W) | 1 |
| Pricing ($/Unit) | Price N/A |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The 2SC4135T-E chip is a high-power, high-frequency transistor developed by Toshiba. It is used in a range of applications, including audio amplifiers, RF power amplifiers, and industrial equipment. The chip offers excellent performance and reliability, making it a popular choice for professionals in various industries.
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Equivalent
There are no direct equivalent products for the 2SC4135T-E chip. However, alternatives that may be used instead include the 2SC4135 transistor or other similar high-speed switching transistors like the 2SC4137 or 2SC4136, depending on the specific application requirements. -
Features
The 2SC4135T-E is a silicon NPN triple diffusion mesa type transistor. It features high breakdown voltage, low saturation voltage, and high-speed switching. Its compact size and high reliability make it suitable for applications in various electronic devices. -
Pinout
The 2SC4135T-E is a 3-pin NPN transistor with a collector current of 1.5A and a collector-emitter voltage of 120V. The pins are labeled as follows: Pin 1: Emitter, Pin 2: Base, Pin 3: Collector. -
Manufacturer
The manufacturer of the 2SC4135T-E is Toshiba Electronic Devices & Storage Corporation. Toshiba is a multinational conglomerate company that operates in various industries, including electronic devices, semiconductors, and storage products. They specialize in the development and manufacturing of a wide range of consumer electronics and industrial products. -
Application Field
The 2SC4135T-E is a high-frequency transistor commonly used in applications such as low noise amplifiers, oscillators, and RF power amplifiers. Its high gain, low noise figure, and suitable power handling capabilities make it well-suited for use in wireless communication systems, radar systems, and other high-frequency electronic devices. -
Package
The 2SC4135T-E chip is a surface-mount transistor package type with a TO-252(DPAK) form factor and a size of approximately 6.5mm x 6.1mm x 2.27mm.
Datasheet PDF
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