STM32F411VET6

STM32F411VET6 General Description

The STM32F411xC/xE devices are based on the high-performance Arm®Cortex®-M4 32-bit RISC core operating at a frequency of up to 100 MHz. The Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types. It also implements a full set of DSP instructions and a memory protection unit (MPU) which enhances application security.The STM32F411xC/xE belongs to the STM32 Dynamic Efficiency™ product line (with products combining power efficiency, performance and integration) while adding a new innovative feature called Batch Acquisition Mode (BAM) allowing to save even more power consumption during data batching.The STM32F411xC/xE incorporate high-speed embedded memories (up to 512 Kbytes of Flash memory, 128 Kbytes of SRAM), and an extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB bus and a 32-bit multi-AHB bus matrix.All devices offer one 12-bit ADC, a low-power RTC, six general-purpose 16-bit timers including one PWM timer for motor control, two general-purpose 32-bit timers. They also feature standard and advanced communication interfaces.The STM32F411xC/xE operate in the - 40 to + 125 °C temperature range from a 1.7 (PDR OFF) to 3.6 V power supply. A comprehensive set of power-saving mode allows the design of low-power applications.These features make the STM32F411xC/xE microcontrollers suitable for a wide range of applications.Discovery kit with STM32F407VG MCU * New order c.ST-LINK/V2 in-circuit debugger/programmer for ST.STM32 Nucleo-64 development board with STM32F411.Evaluation board with STM32F439NI MCU.Evaluation board with STM32F429NI MCU.

Features

• Dynamic Efficiency Line with BAM (Batch Acquisition Mode)
  • 1.7 V to 3.6 V power supply
  • - 40°C to 85/105/125 °C temperature range
• Core: Arm^® 32-bit Cortex^®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
• Memories
  • Up to 512 Kbytes of Flash memory
  • 128 Kbytes of SRAM
• Clock, reset and supply management
  • 1.7 V to 3.6 V application supply and I/Os
  • POR, PDR, PVD and BOR
  • 4-to-26 MHz crystal oscillator
  • Internal 16 MHz factory-trimmed RC
  • 32 kHz oscillator for RTC with calibration
  • Internal 32 kHz RC with calibration
• Power consumption
  • Run: 100 μA/MHz (peripheral off)
  • Stop (Flash in Stop mode, fast wakeup time): 42 μA Typ @ 25C; 65 μA max @25 °C
  • Stop (Flash in Deep power down mode, slow wakeup time): down to 9 μA @ 25 °C; 28 μA max @25 °C
  • Standby: 1.8 μA @25 °C / 1.7 V without RTC; 11 μA @85 °C @1.7 V
  • V_BAT supply for RTC: 1 μA @25 °C
• 1×12-bit, 2.4 MSPS A/D converter: up to 16 channels
• General-purpose DMA: 16-stream DMA controllers with FIFOs and burst support
• Up to 11 timers: up to six 16-bit, two 32-bit timers up to 100 MHz, each with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input, two watchdog timers (independent and window) and a SysTick timer
• Debug mode
  • Serial wire debug (SWD) & JTAG interfaces
  • Cortex^®-M4 Embedded Trace Macrocell™
• Up to 81 I/O ports with interrupt capability
  • Up to 78 fast I/Os up to 100 MHz
  • Up to 77 5 V-tolerant I/Os
• Up to 13 communication interfaces
  • Up to 3 x I²C interfaces (SMBus/PMBus)

Application

Specifications