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ST STGWA50M65DF2
Trench gate field-stop IGBT M series, 650 V 50 A low loss
Brands: Stmicroelectronics
Mfr.Part #: STGWA50M65DF2
Datasheet: STGWA50M65DF2 Datasheet (PDF)
Package/Case: TO-247 long leads
RoHS Status:
Stock Condition: 2800 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $4.924 | $4.924 |
| 10 | $4.300 | $43.000 |
| 30 | $3.929 | $117.870 |
| 90 | $3.555 | $319.950 |
| 510 | $3.381 | $1724.310 |
| 990 | $3.304 | $3270.960 |
In Stock:2800 PCS
STGWA50M65DF2 General Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Features
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.65 V (typ.) @ IC = 50 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft- and fast-recovery antiparallel diode
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Operating Temp Min Celsius | -55.0 | Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 | ECCN EU | NEC |
| Packing Type | Tube | RoHs compliant | Ecopack2 |
| Grade | Industrial |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The STGWA50M65DF2 chip is a high-power wideband RF GaN transistor designed for use in wireless communication systems. It offers a maximum output power of 50W and operates in a frequency range of 0.4 to 2.7 GHz. The chip features high gain, excellent linearity, and low thermal resistance, making it suitable for applications such as power amplifiers in base stations, small cells, and repeaters.
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Equivalent
There are no directly equivalent products to the STGWA50M65DF2 chip. However, there are other MOSFET chips available from different manufacturers that may offer similar specifications and features. These include chips from companies such as Infineon, Toshiba, and Texas Instruments, which can be explored as potential alternatives. -
Features
The STGWA50M65DF2 features a low on-state resistance, high switching capability, and a compact package design. It is a 650V silicon carbide trench MOSFET with a maximum current rating of 75A, making it suitable for power electronics applications such as industrial motor drives, electric vehicle charging systems, and renewable energy inverters. -
Pinout
The STGWA50M65DF2 has a pin count of 11 and functions as a high voltage module for power applications. It is designed for implementation in a wide range of power conversion circuits such as motor control, inverters, and switching power supplies. -
Manufacturer
The manufacturer of the STGWA50M65DF2 is STMicroelectronics. It is a multinational semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products, including microcontrollers, integrated circuits, sensors, power management, and more. -
Application Field
The STGWA50M65DF2 is a power semiconductor module commonly used in applications such as industrial motor drives, renewable energy systems, and electric vehicle powertrain solutions. It offers high power density, low conduction and switching losses, and efficient thermal management, making it suitable for demanding applications requiring high-performance and energy efficiency. -
Package
The STGWA50M65DF2 chip has a package type of PowerFLAT 8x8 HV, a form of MOSFET, and a size of 8mm x 8mm.
Datasheet PDF
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