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ST STF12NK60Z
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube
Brands: STMicroelectronics, Inc
Mfr.Part #: STF12NK60Z
Datasheet: STF12NK60Z Datasheet (PDF)
Package/Case: TO-220FP
RoHS Status:
Stock Condition: 2684 pcs, New Original
Product Type: Transistors
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.133 | $1.133 |
| 10 | $0.966 | $9.660 |
| 50 | $0.874 | $43.700 |
| 100 | $0.770 | $77.000 |
| 500 | $0.724 | $362.000 |
| 1200 | $0.704 | $844.800 |
In Stock:2684 PCS
STF12NK60Z General Description
The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application.Such series complements ST full range of high voltage Power MOSFETs.
Features
- Extremely high dv/dt capability
- Gate charge minimized
- 100% avalanche tested
- Very good manufacturing repeatability
- Very low intrinsic capacitances
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | STMicroelectronics | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 10 A |
| Rds On - Drain-Source Resistance: | 640 mOhms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | Qg - Gate Charge: | 59 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 35 W | Channel Mode: | Enhancement |
| Tradename: | SuperMESH | Series: | STF12NK60Z |
| Packaging: | Tube | Brand: | STMicroelectronics |
| Configuration: | Single | Fall Time: | 31.5 ns |
| Forward Transconductance - Min: | 9 S | Height: | 9.3 mm |
| Length: | 10.4 mm | Product Type: | MOSFET |
| Rise Time: | 18.5 ns | Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Type: | Power MOSFET | Typical Turn-Off Delay Time: | 55 ns |
| Typical Turn-On Delay Time: | 22.5 ns | Width: | 4.6 mm |
| Unit Weight: | 0.068784 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The STF12NK60Z is a power MOSFET chip designed for high voltage applications. It offers low ON resistance and high energy efficiency, making it suitable for use in various power electronic devices. The chip has a maximum voltage rating of 600V and a continuous drain current of 12A. It is commonly used in industrial and automotive applications that require efficient power control and management.
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Features
The STF12NK60Z is a power MOSFET transistor. It has a drain-source voltage rating of 600V, a continuous drain current of 10A, and a low on-resistance value. It is designed to be used in various applications including power supplies, motor controls, and lighting systems. -
Pinout
The STF12NK60Z is a power MOSFET with a TO-220 package. It has 3 pins: gate (G), drain (D), and source (S). The gate pin is used to control the flow of current between the drain and source pins. -
Manufacturer
The manufacturer of the STF12NK60Z is STMicroelectronics. STMicroelectronics is a multinational semiconductor and electronics company headquartered in Geneva, Switzerland. It is one of the largest semiconductor manufacturers globally, producing a wide range of products including integrated circuits, microcontrollers, and power management solutions for various industries. -
Application Field
The STF12NK60Z is a power MOSFET transistor that can be used in various application areas, including power supplies, motor control, lighting systems, battery chargers, and automotive applications. -
Package
The STF12NK60Z chip is in a TO-220 package type, which refers to the shape and configuration of the casing that protects the chip. It has a form of through-hole mounting, which means the leads go through the circuit board. The size of the package is approximately 10.2 mm x 15.3 mm.
Datasheet PDF
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365 days quality guarantee for all products
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