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Infineon SPP07N60S5
Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220 Tube
Brands: Infineon Technologies Corporation
Mfr.Part #: SPP07N60S5
Datasheet: SPP07N60S5 Datasheet (PDF)
Package/Case: TO-220-3
Product Type: Transistors
SPP07N60S5 General Description
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.3A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Power Dissipation Ptot Max:83W; Pulse Current Idm:14.6A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
Features
- Innovative high voltage technology
- Worldwide best R
- DS(on)
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Infineon | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 7.3 A |
| Rds On - Drain-Source Resistance: | 600 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 82 W | Channel Mode: | Enhancement |
| Tradename: | CoolMOS | Series: | CoolMOS S5 |
| Packaging: | Tube | Brand: | Infineon Technologies |
| Configuration: | Single | Fall Time: | 20 ns |
| Height: | 15.65 mm | Length: | 10 mm |
| Product Type: | MOSFET | Rise Time: | 40 ns |
| Factory Pack Quantity: | 500 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 170 ns |
| Typical Turn-On Delay Time: | 120 ns | Width: | 4.4 mm |
| Part # Aliases: | SPP7N6S5XK SP000012115 SPP07N60S5HKSA1 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SPP07N60S5 chip is a power MOSFET transistor that is designed for high-voltage switching applications in power supplies and motor control systems. It features a low on-resistance and a high switching capability, making it suitable for use in high-power circuits. This chip is commonly used in a variety of industrial and consumer electronic devices.
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Equivalent
There are no direct equivalent products for the SPP07N60S5 chip. However, alternative options that offer similar functionalities and features are available from different manufacturers, such as the IRF840, IRFP260, and IRF1404. -
Features
The SPP07N60S5 is a high-voltage power MOSFET. Some of its features include a drain-source voltage rating of 650V, a continuous drain current of 7A, a low on-resistance of 0.4Ω, and a fast switching capability. It is designed for use in various applications such as power supplies, motor control, and inverters. -
Pinout
The SPP07N60S5 is a power transistor with a TO-220 package. It has 3 pins: the drain (D), the source (S), and the gate (G). The drain is connected to the positive power supply, the source connects to the load, and the gate controls the transistor's conductivity. -
Manufacturer
Infineon Technologies AG is the manufacturer of the SPP07N60S5. It is a German semiconductor manufacturing company that specializes in the production of power electronics, microcontrollers, and other integrated circuits. -
Application Field
The SPP07N60S5 is a power MOSFET transistor that can be used in a variety of applications, including motor control, power supplies, and inverters. It is particularly suitable for high-frequency applications due to its low internal capacitance and high switching speed capabilities. -
Package
The SPP07N60S5 chip is a silicon-based power MOSFET that comes in a TO-220 package. The package form is a transistor-outline with three pins, enabling easy integration into electronic circuits. The size of the TO-220 package is approximately 10.4mm x 15.5mm x 4.6mm (length x width x height).
Datasheet PDF
Key points
-
The SPP07N60S5 chip is a power MOSFET transistor that is designed for high-voltage switching applications in power supplies and motor control systems. It features a low on-resistance and a high switching capability, making it suitable for use in high-power circuits. This chip is commonly used in a variety of industrial and consumer electronic devices.
-
Equivalent
There are no direct equivalent products for the SPP07N60S5 chip. However, alternative options that offer similar functionalities and features are available from different manufacturers, such as the IRF840, IRFP260, and IRF1404. -
Features
The SPP07N60S5 is a high-voltage power MOSFET. Some of its features include a drain-source voltage rating of 650V, a continuous drain current of 7A, a low on-resistance of 0.4Ω, and a fast switching capability. It is designed for use in various applications such as power supplies, motor control, and inverters. -
Pinout
The SPP07N60S5 is a power transistor with a TO-220 package. It has 3 pins: the drain (D), the source (S), and the gate (G). The drain is connected to the positive power supply, the source connects to the load, and the gate controls the transistor's conductivity. -
Manufacturer
Infineon Technologies AG is the manufacturer of the SPP07N60S5. It is a German semiconductor manufacturing company that specializes in the production of power electronics, microcontrollers, and other integrated circuits. -
Application Field
The SPP07N60S5 is a power MOSFET transistor that can be used in a variety of applications, including motor control, power supplies, and inverters. It is particularly suitable for high-frequency applications due to its low internal capacitance and high switching speed capabilities. -
Package
The SPP07N60S5 chip is a silicon-based power MOSFET that comes in a TO-220 package. The package form is a transistor-outline with three pins, enabling easy integration into electronic circuits. The size of the TO-220 package is approximately 10.4mm x 15.5mm x 4.6mm (length x width x height).
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