Infineon S29GL01GS11DHIV20
FLASH - NOR Memory IC 1Gbit Parallel 110 ns 64-FBGA (9x9)
Brands: Infineon Technologies Corporation
Mfr.Part #: S29GL01GS11DHIV20
Datasheet: S29GL01GS11DHIV20 Datasheet (PDF)
Package/Case: 64-LBGA
Product Type: Memory
RoHS Status:
Stock Condition: 2705 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomS29GL01GS11DHIV20 General Description
FLASH - NOR Memory IC 1Gbit Parallel 110 ns 64-FBGA (9x9)
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
RHoS | yes | PBFree | yes |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Reach Compliance Code | compliant |
Access Time-Max | 110 ns | Additional Feature | 20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES |
Alternate Memory Width | 1 | Command User Interface | YES |
Common Flash Interface | YES | Data Polling | YES |
Data Retention Time-Min | 2 | Endurance | 100000 Write/Erase Cycles |
JESD-30 Code | S-PBGA-B64 | JESD-609 Code | e1 |
Length | 9 mm | Memory Density | 1073741824 bit |
Memory IC Type | FLASH | Memory Width | 8 |
Moisture Sensitivity Level | 3 | Number of Functions | 1 |
Number of Sectors/Size | 1K | Number of Terminals | 64 |
Number of Words | 134217728 words | Number of Words Code | 128000000 |
Operating Mode | ASYNCHRONOUS | Operating Temperature-Max | 85 °C |
Operating Temperature-Min | -40 °C | Organization | 128MX8 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | LBGA | Package Equivalence Code | BGA64,8X8,40 |
Package Shape | SQUARE | Package Style | GRID ARRAY, LOW PROFILE |
Page Size | 32 words | Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | 260 | Programming Voltage | 3 V |
Ready/Busy | YES | Seated Height-Max | 1.4 mm |
Sector Size | 128K | Standby Current-Max | 0.0001 A |
Supply Current-Max | 0.1 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V | Supply Voltage-Nom (Vsup) | 3 V |
Surface Mount | YES | Technology | CMOS |
Terminal Finish | TIN SILVER COPPER | Terminal Form | BALL |
Terminal Pitch | 1 mm | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 30 | Toggle Bit | YES |
Type | NAND TYPE |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The S29GL01GS11DHIV20 is a flash memory chip manufactured by Cypress Semiconductor. It has a capacity of 1 gigabit and uses NOR flash technology. The chip is designed for storage applications in various devices such as embedded systems, automotive electronics, and consumer electronics. It offers high performance, reliability, and a wide operating temperature range, making it suitable for demanding applications.
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Equivalent
There are no direct equivalent products for the S29GL01GS11DHIV20 chip. However, similar products that may be considered are other flash memory chips with similar specifications and features, such as the Samsung K9LAG08U0M or the Micron MT29F2G08ABAEAWP. -
Features
The S29GL01GS11DHIV20 is a high-performance NOR Flash memory that offers a capacity of 1Gbit. It operates at a voltage range of 2.7V to 3.6V, has a fast access time of 90ns, and supports both asynchronous and synchronous interface options. It is designed for various applications requiring reliable and high-density memory solutions. -
Pinout
The S29GL01GS11DHIV20 is a flash memory IC. It has a pin count of 48 pins in a TSOP package. The specific pin functions can vary depending on the configuration and application, but generally, the pins include power supply inputs, address and data inputs, control inputs, and output pins for data retrieval. -
Manufacturer
The manufacturer of the S29GL01GS11DHIV20 is Cypress Semiconductor. Cypress Semiconductor is a global semiconductor manufacturing company that specializes in the design and development of high-performance integrated circuits and memory solutions for various industries, including automotive, consumer electronics, and industrial applications. -
Application Field
The S29GL01GS11DHIV20 is a 1Gb NAND flash memory device. It is commonly used in applications such as automotive systems, industrial automation, networking equipment, and digital consumer electronics where high-density non-volatile memory is required for storage and data retention. -
Package
The S29GL01GS11DHIV20 chip is a BGA (Ball Grid Array) package type with a form factor of 11mm x 12mm. Its size is classified as 0.4 mm pitch and contains 64 balls.
Datasheet PDF
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