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NVMFS5C604NLAFT1G
MOSFET T6 60V HEFET
Brands: onsemi
Mfr.Part #: NVMFS5C604NLAFT1G
Datasheet: NVMFS5C604NLAFT1G Datasheet (PDF)
Package/Case: SO-8FL-4
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomNVMFS5C604NLAFT1G General Description
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Features
- Low RDS(on)
- Low QG and Gate capacitance
- Industry standard Small Footprint (5x6 mm)
- NVMFS5C604NLWF − Wettable Flank Option
- AEC−Q101 Qualified and PPAP Capable
- RoHS Compliant
Application
- Reverse Battery protection
- Switching power supplies
- Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SO-8FL-4 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 287 A |
| Rds On - Drain-Source Resistance: | 930 uOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 120 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 200 W | Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 | Series: | NVMFS5C604NL |
| Packaging: | MouseReel | Brand: | onsemi |
| Configuration: | Single | Fall Time: | 81.3 ns |
| Forward Transconductance - Min: | 180 S | Product Type: | MOSFET |
| Rise Time: | 79.1 ns | Factory Pack Quantity: | 1500 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 57.8 ns | Typical Turn-On Delay Time: | 21.8 ns |
| Unit Weight: | 0.026455 oz | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 287A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 1.2mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 4.5 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive | Qualification | AEC-Q101 |
| Mounting Type | Surface Mount | Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NVMFS5C604NLAFT1G chip is a Non-Volatile Memory Field-Effect Transistor (NVM-FET) with a 60 V, 2000 mA rating. It is designed for power management applications and provides high performance and reliability. It features high efficiency, low resistance, and is suitable for use in various environments. This chip is commonly used in automotive, consumer, and industrial applications where power management is essential.
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Features
The NVMFS5C604NLAFT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) featuring low ON resistance, high withstand voltage, and compact size. It has a drain-to-source voltage rating of 60 volts and a drain current capability of 4 amperes. This device is designed for efficient power management applications in various electronic systems. -
Pinout
The NVMFS5C604NLAFT1G is a 40-pin Dual N-Channel Power MOSFET, with features including low RDS(on), high-side gate-drive, and integrated reverse polarity protection. It is commonly used in automotive applications and features a compact surface-mount package. -
Manufacturer
ON Semiconductor is the manufacturer of the NVMFS5C604NLAFT1G. It is a multinational semiconductor company that specializes in power management and sensor solutions. -
Application Field
The NVMFS5C604NLAFT1G is a small, low-voltage power MOSFET commonly used in various electronic devices such as smartphones, tablets, and portable electronics. It is also used for power management in consumer electronics, networking equipment, and battery-powered devices requiring efficient and reliable power control. -
Package
The NVMFS5C604NLAFT1G chip has a PQFN package type, a quad flat no-lead form, and a size of 3mm x 3mm.
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