This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

NTS4101PT1G 48HRS

-20V rated P-Channel Power MOSFET offering a current capacity of -1

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: NTS4101PT1G

Datasheet: NTS4101PT1G Datasheet (PDF)

Package/Case: SC-70-3 , SOT-323-3

RoHS Status:

Stock Condition: 9568 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
5 $0.111 $0.555
50 $0.092 $4.600
150 $0.082 $12.300
500 $0.068 $34.000
3000 $0.062 $186.000
6000 $0.059 $354.000

In Stock:9568 PCS

- +

Quick Quote

Please submit RFQ for NTS4101PT1G or email to us: Email: [email protected], we will contact you within 12 hours.

NTS4101PT1G General Description

MOSFET, P, 20V, SOT-323; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.37A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -640mV; Power Dissipation Pd: 329mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 1.37A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -640mV; Voltage Vgs Rds on Measurement: -4.5V

NTS4101PT1G

Features

  • Leading -20 V Trench for Low RDS(on)
  • -2.5 V Rated for Low Voltage Gate Drive
  • SC-70 Surface Mount For Small Footprint (2x2 mm)

Application

  • High Side Load Switch
  • Charging Circuit
  • Single Cell Battery Applications

Specifications

Parameter Value Parameter Value
Status Active Compliance PbAHP
Package Type SC-70-3 / SOT-323-3 Case Outline 419-04
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Channel Polarity P-Channel
Configuration Single V(BR)DSS Min (V) -20
VGS Max (V) 8 VGS(th) Max (V) 1.5
ID Max (A) 1.37 PD Max (W) 0.329
RDS(on) Max @ VGS = 2.5 V (mΩ) 104 RDS(on) Max @ VGS = 4.5 V (mΩ) 83
Qg Typ @ VGS = 4.5 V (nC) 1.2 Qg Typ @ VGS = 10 V (nC) 6.4
Ciss Typ (pF) 603

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The NTS4101PT1G is a high-speed, low capacitance single-pole, single-throw (SPST) silicon PIN diode switch designed for radio frequency (RF) and microwave applications. It operates in the frequency range of DC to 18 GHz and is commonly used for antenna switching, switch matrices, and signal routing in communication systems. It offers low insertion loss and high isolation performance.
  • Equivalent

    The equivalent products of NTS4101PT1G chip are NTS4101PT1 and NTS4102PT1G chips, which are both N-channel MOSFETs with similar specifications and features. These chips can be used as a substitute for the NTS4101PT1G chip in various applications.
  • Features

    NTS4101PT1G is a highly efficient P-channel MOSFET with a low on-resistance of 30mΩ, suitable for low voltage applications. It has a compact DFN3x3 package, a maximum drain-source voltage of -20V, and a continuous drain current of -3.2A. This MOSFET is designed for power management in portable devices and consumer electronics.
  • Pinout

    NTS4101PT1G is a dual 4-channel high-speed CMOS analog multiplexer/demultiplexer with a 16-pin count. It allows selection between two sets of four channels. The device functions as a two-pole, four-position switch with break-before-make feature.
  • Manufacturer

    NTS4101PT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions for power management, analog, sensors, logic, timing, connectivity, discrete, SoC and custom devices. ON Semiconductor serves a wide range of industries, including automotive, consumer electronics, medical, industrial, and aerospace.
  • Application Field

    NTS4101PT1G is commonly used in automotive, industrial, and communication applications such as power management, voltage regulation, and battery charging. This MOSFET provides low on-resistance and high current capabilities, making it ideal for high power applications where efficiency and reliability are critical.
  • Package

    The NTS4101PT1G is a surface mount package type MOSFET chip in a TO-236AB (SOT-23) form. It has a size of 2.9mm x 1.3mm x 1.1mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • FDP032N08

    FDP032N08

    Onsemi

    75V 235A N-Ch MOSFET PowerTrench TO220

  • 2SK2225-E

    2SK2225-E

    Renesas

    MOSFET Power Transistor 2SK2225-E: Lead-Free, TO-3...

  • FDP150N10

    FDP150N10

    ON Semiconductor, LLC

    MOSFET 100V N-Channel PowerTrench

  • SCT30N120

    SCT30N120

    Stmicroelectronics

    N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole H

  • FDP8896

    FDP8896

    Onsemi

    The FDP8896 is a 3-pin transistor with N-channel M...

  • FDPF045N10A

    FDPF045N10A

    ON Semiconductor, LLC

    N-Channel 100 V 67A (Tc) 43W (Tc) Through Hole TO-...