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NT5CB64M16GP-EK
DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.5V 96-Pin VFBGA
Brands: NANYA TECHNOLOGY CORP
Mfr.Part #: NT5CB64M16GP-EK
Datasheet: NT5CB64M16GP-EK Datasheet (PDF)
Package/Case: VFBGA
RoHS Status:
Stock Condition: 6554 pcs, New Original
Product Type: DRAMs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $5.513 | $5.513 |
| 200 | $2.135 | $427.000 |
| 500 | $2.059 | $1029.500 |
| 1000 | $2.021 | $2021.000 |
In Stock:6554 PCS
NT5CB64M16GP-EK General Description
The NT5CB64M16GP-EK is a specific model of an electronic component known as a memory chip. It falls under the category of DRAM (Dynamic Random-Access Memory) and is produced by a particular manufacturer that may not be mentioned specifically due to sensitivity to advertisements or endorsements.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | Package Description | VFBGA, BGA96,9X16,32 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| HTS Code | 8542.32.00.32 | Access Mode | MULTI BANK PAGE BURST |
| Access Time-Max | 0.195 ns | Additional Feature | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 933 MHz | I/O Type | COMMON |
| Interleaved Burst Length | 8 | JESD-30 Code | R-PBGA-B96 |
| Length | 13 mm | Memory Density | 1073741824 bit |
| Memory IC Type | DDR3 DRAM | Memory Width | 16 |
| Number of Functions | 1 | Number of Ports | 1 |
| Number of Terminals | 96 | Number of Words | 67108864 words |
| Number of Words Code | 64000000 | Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 °C | Operating Temperature-Min | |
| Organization | 64MX16 | Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY | Package Code | VFBGA |
| Package Equivalence Code | BGA96,9X16,32 | Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Power Supplies | 1.5 V | Qualification Status | Not Qualified |
| Refresh Cycles | 8192 | Seated Height-Max | 1 mm |
| Self Refresh | YES | Sequential Burst Length | 8 |
| Standby Current-Max | 0.011 A | Supply Current-Max | 0.244 mA |
| Supply Voltage-Max (Vsup) | 1.575 V | Supply Voltage-Min (Vsup) | 1.425 V |
| Supply Voltage-Nom (Vsup) | 1.5 V | Surface Mount | YES |
| Technology | CMOS | Temperature Grade | OTHER |
| Terminal Form | BALL | Terminal Pitch | 0.8 mm |
| Terminal Position | BOTTOM | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Width | 8 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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![Product]( "Product")
Step1 :Product
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![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
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![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NT5CB64M16GP-EK chip is a memory component manufactured by Nanya Technology. It is a low power DDR3L SDRAM that can provide storage capacity of 1 Gb per die. The chip operates at a low voltage of 1.35V and supports high-speed data transfer rates, making it suitable for a wide range of applications, including mobile devices, consumer electronics, and networking equipment.
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Equivalent
There are no directly equivalent products to the NT5CB64M16GP-EK chip. However, there are similar products available from other manufacturers, such as Samsung's K4B4G1646Q-BYK0 or Micron's MT41K256M16TW-107:P chip. These chips have similar specifications and can be used as alternatives in certain applications. -
Features
The NT5CB64M16GP-EK is a 8Gb DDR3L SDRAM module, offering a 64M x 16 organization. It operates at a voltage of 1.35V and has a 14-14-14 timing. It supports clock speeds of up to 1600MHz and provides a data transfer rate of 12.8GB/s. This module is commonly used in various computing applications. -
Pinout
The NT5CB64M16GP-EK is a 64M x 16 DDR3L SDRAM module. It has 240 pins and operates at a voltage of 1.35V. It is mainly used as memory storage in computer systems and electronic devices. -
Manufacturer
The manufacturer of the NT5CB64M16GP-EK is Nanya Technology Corporation. Nanya is a Taiwanese semiconductor company specializing in the production of dynamic random-access memory (DRAM) chips. -
Application Field
The NT5CB64M16GP-EK is a 4Gb DDR3 SDRAM module designed for use in various embedded applications, including but not limited to automotive, industrial, networking, and consumer electronics. It offers high-density memory storage, low power consumption, and fast data transfer speeds, making it suitable for a wide range of devices and systems.
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