ON MUN5114T1G
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 202 mW Surface Mount SC-70-3 (SOT323)
Brands: ON Semiconductor, LLC
Mfr.Part #: MUN5114T1G
Datasheet: MUN5114T1G Datasheet (PDF)
Package/Case: SC-70-3
Product Type: Transistors
RoHS Status:
Stock Condition: 2039 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomMUN5114T1G General Description
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
Application
ONSEMISpecifications
Parameter | Value | Parameter | Value |
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Status | Active | CAD Models | |
Compliance | PbAHP | Package Type | SC-70-3 / SOT-323-3 |
Case Outline | 419-04 | MSL Type | 1 |
MSL Temp (°C) | 260 | Container Type | REEL |
Container Qty. | 3000 | ON Target | N |
Polarity | PNP | IC Continuous (A) | 0.1 |
V(BR)CEO Min (V) | 50 | hFE Min | 80 |
R1 (kΩ) | 10 | R2 (kΩ) | 47 |
R1/R2 Typ | 0.213 | Vi(off) Max (V) | 0.5 |
Vi(on) Min (V) | 1.4 | Pricing ($/Unit) | $0.0159 |
Manufacturer: | onsemi | Product Category: | Bipolar Transistors - Pre-Biased |
RoHS: | Details | Configuration: | Single |
Transistor Polarity: | PNP | Typical Input Resistor: | 10 kOhms |
Typical Resistor Ratio: | 0.21 | Mounting Style: | SMD/SMT |
Package / Case: | SOT-323-3 | DC Collector/Base Gain hfe Min: | 80 |
Collector- Emitter Voltage VCEO Max: | 50 V | Continuous Collector Current: | 100 mA |
Peak DC Collector Current: | 100 mA | Pd - Power Dissipation: | 202 mW |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Series: | MUN5114 | Packaging: | MouseReel |
Brand: | onsemi | DC Current Gain hFE Max: | 80 |
Height: | 0.85 mm | Length: | 2.1 mm |
Product Type: | BJTs - Bipolar Transistors - Pre-Biased | Factory Pack Quantity: | 3000 |
Subcategory: | Transistors | Width: | 1.24 mm |
Unit Weight: | 0.000219 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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MUN5114T1G is a power transistor chip developed by ON Semiconductor. It is designed for medium power switching applications. This chip offers high voltage capability and transient performance, making it suitable for use in various industrial, consumer, and automotive applications. With its compact size and excellent thermal resistance, the MUN5114T1G chip provides efficient and reliable power switching solutions in a wide range of electronic devices.
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Equivalent
The equivalent products of MUN5114T1G chip include MMBT5114LT1G, PZTA11T1G, SS8550D, and BC847CMTF. -
Features
The MUN5114T1G is a small signal transistor with high current gain. It is designed for amplification and switching applications, and it operates at low voltage levels. The device has a low collector-emitter saturation voltage, making it suitable for low power consumption applications. -
Pinout
The MUN5114T1G is a dual NPN/PNP resistor-equipped transistor. It has a pin count of 6, with three pins on each side. The transistor functions as both a switch and an amplifier, allowing current to flow or be amplified depending on the input. -
Manufacturer
The manufacturer of the MUN5114T1G is ON Semiconductor. It is a global semiconductor company that designs, manufactures, and sells a range of semiconductor components, including integrated circuits, power management products, and sensors for various industries, including automotive, industrial, and consumer electronics. -
Application Field
The MUN5114T1G is a general-purpose transistor that can be used in a wide range of applications, including switching circuits, amplifier stages, and voltage regulation circuits. It can be used in electronic devices such as televisions, computers, and audio equipment to control current flow and amplify signals. -
Package
The MUN5114T1G chip has a SOT-23 package type, a transistor form, and a size of approximately 2.9mm x 1.3mm.
Datasheet PDF
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