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TI LMG1210RVRR
Half-Bridge Gate Driver IC Non-Inverting 19-WQFN (3x4)
Brands: TI
Mfr.Part #: LMG1210RVRR
Datasheet: LMG1210RVRR Datasheet (PDF)
Package/Case: WQFN-19
RoHS Status:
Stock Condition: 2000 pcs, New Original
Product Type: Gate Drivers
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $4.091 | $4.091 |
| 10 | $3.567 | $35.670 |
| 30 | $3.253 | $97.590 |
| 100 | $2.937 | $293.700 |
| 500 | $2.792 | $1396.000 |
| 1000 | $2.726 | $2726.000 |
In Stock:2000 PCS
LMG1210RVRR General Description
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.
To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.
The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.
Features
- Up to 50-MHz operation
- 10-ns typical propagation delay
- 3.4-ns high-side to low-side matching
- Minimum pulse width of 4 ns
- Two control input options
- Single PWM input with adjustable dead time
- Independent input mode
- 1.5-A peak source and 3-A peak sink currents
- External bootstrap diode for flexibility
- Internal LDO for adaptability to voltage rails
- High 300-V/ns CMTI
- HO to LO capacitance less than 1 pF
- UVLO and overtemperature protection
- Low-inductance WQFN package
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Bus voltage (max) (V) | 300 | Power switch | GaNFET, MOSFET |
| Input VCC (min) (V) | 6 | Input VCC (max) (V) | 18 |
| Peak output current (A) | 3 | Operating temperature range (°C) | -40 to 125 |
| Undervoltage lockout (typ) (V) | 4 | Rating | Catalog |
| Propagation delay time (µs) | 0.01 | Rise time (ns) | 0.5 |
| Fall time (ns) | 0.5 | Iq (mA) | 0.3 |
| Input threshold | TTL | Channel input logic | TTL/PWM |
| Features | Dead time control, Internal LDO |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The LMG1210RVRR chip is a gallium nitride (GaN) power stage device designed for use in high-frequency and high-efficiency applications. It offers low on-resistance, fast switching capabilities, and a small form factor, making it suitable for power electronics applications such as DC-DC converters, motor drives, and wireless charging systems. Its advanced features enable higher power density and improved system performance.
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Equivalent
Some equivalent products of the LMG1210RVRR chip include Texas Instruments' LMG1200HV/LMG1215 series, Infineon's IPS60 and IPS65 series, and ON Semiconductor's NCV8710 and NCV8701 series. -
Features
The LMG1210RVRR is a High Voltage GaN Power Stage Module from Texas Instruments. It features a 600V breakdown voltage, high efficiency, low RDS(on), and an integrated gate driver. It is compact and designed for various power applications, such as motor drives and power supplies. -
Pinout
The LMG1210RVRR is a DC-DC module with a pin count of 16. Some of its key functions include providing voltage regulation, power conversion, and output voltage monitoring. -
Application Field
The LMG1210RVRR is a wide-bandgap silicon carbide (SiC) depletion-mode power metal-oxide-semiconductor field-effect transistor (MOSFET) for high-power applications. Its application areas include industrial motor drives, traction drives in electric vehicles, uninterruptible power supplies (UPS), renewable energy systems, and power converters. -
Package
The LMG1210RVRR chip is available in a QFN package type. It comes in a form factor of 3mm x 3mm and has a typical weight of 0.0075 grams.
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