Infineon IDB06S60C

Part points

• The IDB06S60C chip is a silicon carbide (SiC) diode module used in power electronic applications. It has a voltage rating of 600V and a current rating of 6A. The chip combines the high-speed switching capabilities of SiC with low conduction and switching losses, making it suitable for high-performance and energy-efficient designs.

• Equivalent

  Some of the equivalent products of the IDB06S60C chip include the Infineon FSAM20SM60A, Mitsubishi CM300DY-24H, and Fuji 2MBI75U4H-120-50 chip. They are all power semiconductor devices used for switching applications with similar specifications and features as the IDB06S60C.

• Features

  The IDB06S60C is a high-speed low-side IGBT driver that has under-voltage lockout protection and short circuit protection. It is able to handle high voltage levels and has a built-in desaturation detection circuit. With a minimum input pulse width of 200 ns, it is suitable for applications such as motor drives, inverters, and power suppliers.

• Pinout

  The IDB06S60C is an IGBT (Insulated Gate Bipolar Transistor) module with a pin count of 7. The pin functions include two emitter pins (E1, E2), two collector pins (C1, C2), a gate pin (G), and two additional control pin (VG, CG) used for gate biasing and controlling protection characteristics.

• Manufacturer

  Infineon Technologies is the manufacturer of the IDB06S60C. It is a German semiconductor company that focuses on producing and developing various automotive, industrial, and power electronics solutions.

• Application Field

  The IDB06S60C is an insulated-gate bipolar transistor (IGBT) module used in power conversion and motor control applications. It can be applied in areas such as industrial machinery, renewable energy systems, electric vehicle inverters, and motor drives. With its high power handling capability and low saturation voltage, it is suitable for various high-power switching applications.