FQPF2N60C
N-Channel 600 V 2A (Tc) 23W (Tc) Through Hole TO-220F-3
Brands: ONSEMI
Mfr.Part #: FQPF2N60C
Datasheet: FQPF2N60C Datasheet (PDF)
Package/Case: TO-220FP
RoHS Status:
Stock Condition: 7335 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $0.360 | $0.360 |
10 | $0.293 | $2.930 |
30 | $0.266 | $7.980 |
100 | $0.229 | $22.900 |
500 | $0.213 | $106.500 |
1000 | $0.204 | $204.000 |
In Stock:7335 PCS
FQPF2N60C General Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 2A, 600V, RDS(on) = 4.7Ω(Max.) @VGS = 10 V, ID = 1A
- Low gate charge ( Typ. 8.5nC)
- Low Crss ( Typ. 4.3pF)
- 100% avalanche tested
Application
- Lighting
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Source Content uid | FQPF2N60C | Pbfree Code | Yes |
Part Life Cycle Code | End Of Life | Ihs Manufacturer | ONSEMI |
Package Description | TO-220F, 3 PIN | Manufacturer Package Code | 221AT |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 4 Weeks | Samacsys Manufacturer | onsemi |
Avalanche Energy Rating (Eas) | 120 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (ID) | 2 A | Drain-source On Resistance-Max | 4.7 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 23 W | Pulsed Drain Current-Max (IDM) | 8 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
Step1 :Product
-
Step2 :Vacuum packaging
-
Step3 :Anti-static bag
-
Step4 :Individual packaging
-
Step5 :Packaging boxes
-
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The FQPF2N60C is a power MOSFET chip commonly used in electronic devices. It operates at a voltage of 600V and a current of 2A, making it suitable for high power applications. This chip has a low on-resistance and fast switching characteristics. It is widely used in power supplies, motor drives, inverters, and other systems where efficient power switching is required.
-
Equivalent
The equivalent products of the FQPF2N60C chip are the IRF2N60C, P2N60C, and STF2N60AI. -
Features
The FQPF2N60C is a N-channel MOSFET transistor with a voltage rating of 600V and a current rating of 2A. It has a low on-resistance, high switching speed, and it is suitable for a wide range of applications such as power supplies, motor control, and lighting systems. -
Pinout
The FQPF2N60C is a MOSFET transistor with a TO-220 package. It has three pins: the gate (G), the drain (D), and the source (S). The gate pin controls the flow of current between the drain and source pins. It is commonly used in power electronics applications. -
Manufacturer
The manufacturer of the FQPF2N60C is Fairchild Semiconductor. Fairchild Semiconductor is an American company that specializes in the design and manufacturing of semiconductors and integrated circuits. -
Application Field
The FQPF2N60C is a power MOSFET transistor commonly used in applications such as switching power supplies, motor controls, and various high-power electronic devices. It is designed to handle high voltage and current levels efficiently, making it suitable for use in these types of applications. -
Package
The FQPF2N60C is a power MOSFET chip. It is packaged in a TO-220F form, which is a through-hole package type. The size of the chip is approximately 10.16mm x 4.57mm x 9.15mm.
We provide high quality products, thoughtful service and after sale guarantee
-
We have rich products, can meet your various needs.
-
Minimum order quantity starts from 1pcs.
-
Lowest international shipping fee starts from $0.00
-
365 days quality guarantee for all products