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FQPF2N60C 48HRS

N-Channel 600 V 2A (Tc) 23W (Tc) Through Hole TO-220F-3

ISO14001 ISO9001 DUNS

Brands: ONSEMI

Mfr.Part #: FQPF2N60C

Datasheet: FQPF2N60C Datasheet (PDF)

Package/Case: TO-220FP

RoHS Status:

Stock Condition: 7335 pcs, New Original

Product Type: MOSFET

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $0.360 $0.360
10 $0.293 $2.930
30 $0.266 $7.980
100 $0.229 $22.900
500 $0.213 $106.500
1000 $0.204 $204.000

In Stock:7335 PCS

- +

Quick Quote

Please submit RFQ for FQPF2N60C or email to us: Email: [email protected], we will contact you within 12 hours.

FQPF2N60C General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQPF2N60C

Features

  • 2A, 600V, RDS(on) = 4.7Ω(Max.) @VGS = 10 V, ID = 1A
  • Low gate charge ( Typ. 8.5nC)
  • Low Crss ( Typ. 4.3pF)
  • 100% avalanche tested

Application

  • Lighting

Specifications

Parameter Value Parameter Value
Source Content uid FQPF2N60C Pbfree Code Yes
Part Life Cycle Code End Of Life Ihs Manufacturer ONSEMI
Package Description TO-220F, 3 PIN Manufacturer Package Code 221AT
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 4 Weeks Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 120 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 2 A Drain-source On Resistance-Max 4.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 23 W Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The FQPF2N60C is a power MOSFET chip commonly used in electronic devices. It operates at a voltage of 600V and a current of 2A, making it suitable for high power applications. This chip has a low on-resistance and fast switching characteristics. It is widely used in power supplies, motor drives, inverters, and other systems where efficient power switching is required.
  • Equivalent

    The equivalent products of the FQPF2N60C chip are the IRF2N60C, P2N60C, and STF2N60AI.
  • Features

    The FQPF2N60C is a N-channel MOSFET transistor with a voltage rating of 600V and a current rating of 2A. It has a low on-resistance, high switching speed, and it is suitable for a wide range of applications such as power supplies, motor control, and lighting systems.
  • Pinout

    The FQPF2N60C is a MOSFET transistor with a TO-220 package. It has three pins: the gate (G), the drain (D), and the source (S). The gate pin controls the flow of current between the drain and source pins. It is commonly used in power electronics applications.
  • Manufacturer

    The manufacturer of the FQPF2N60C is Fairchild Semiconductor. Fairchild Semiconductor is an American company that specializes in the design and manufacturing of semiconductors and integrated circuits.
  • Application Field

    The FQPF2N60C is a power MOSFET transistor commonly used in applications such as switching power supplies, motor controls, and various high-power electronic devices. It is designed to handle high voltage and current levels efficiently, making it suitable for use in these types of applications.
  • Package

    The FQPF2N60C is a power MOSFET chip. It is packaged in a TO-220F form, which is a through-hole package type. The size of the chip is approximately 10.16mm x 4.57mm x 9.15mm.

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  • quantity

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