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FQD11P06TM
P-Channel 60 V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount TO-252AA
Brands: onsemi
Mfr.Part #: FQD11P06TM
Datasheet: FQD11P06TM Datasheet (PDF)
Package/Case: DPAK-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomFQD11P06TM General Description
This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- -9.4A, -60V, RDS(on) = 185mΩ(Max.) @VGS = -10 V, ID = -4.7A
- Low gate charge ( Typ. 13nC)
- Low Crss ( Typ. 45pF)
- 100% avalanche tested
Application
- LCD TV
- LED TV
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | DPAK-3 |
| Transistor Polarity: | P-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 9.4 A |
| Rds On - Drain-Source Resistance: | 185 mOhms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V | Qg - Gate Charge: | 17 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 2.5 W | Channel Mode: | Enhancement |
| Tradename: | QFET | Series: | FQD11P06 |
| Packaging: | MouseReel | Brand: | onsemi / Fairchild |
| Configuration: | Single | Fall Time: | 45 ns |
| Forward Transconductance - Min: | 4.9 S | Height: | 2.39 mm |
| Length: | 6.73 mm | Product Type: | MOSFET |
| Rise Time: | 40 ns | Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs | Transistor Type: | 1 P-Channel |
| Type: | MOSFET | Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 6.5 ns | Width: | 6.22 mm |
| Part # Aliases: | FQD11P06TM_NL |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FQD11P06TM is a MOSFET (metal-oxide-semiconductor field-effect transistor) chip designed for use in power management applications. It features a low on-resistance and high current capacity, making it ideal for use in various electronic devices that require efficient power regulation.
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Equivalent
The equivalent products of the FQD11P06TM chip are Infineon IPP60R190P6, NXP BUK9609-105A and Fairchild FDP11N40. These are MOSFET transistors with similar specifications and performance characteristics. -
Features
The FQD11P06TM is a power MOSFET with a 60V drain-source voltage rating, 11A continuous drain current, and a low on-resistance of 0.06 ohms. It features a compact DPAK package, high-speed switching, and low gate charge, making it ideal for high-efficiency power supply applications. -
Pinout
FQD11P06TM is a MOSFET transistor with a pin count of 3. Pin 1 is the gate, pin 2 is the drain, and pin 3 is the source. It is typically used in power management applications for controlling current flow. -
Manufacturer
The manufacturer of FQD11P06TM is Fairchild Semiconductor. Fairchild Semiconductor is a semiconductor company that specializes in designing and manufacturing power management and linear integrated circuits. They provide products for various industries such as automotive, consumer electronics, and industrial applications. -
Application Field
FQD11P06TM is a N-channel enhancement mode power MOSFET commonly used in applications requiring high efficiency power switching, such as power supplies, motor control, and LED lighting. It can also be used in battery management systems, automotive electronics, and industrial equipment. -
Package
The FQD11P06TM chip is in a TO-252 package, with a form factor of surface mount. Its size is approximately 6.30mm x 6.30mm x 2.30mm.
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