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FQB12P20TM
P-Channel 200 V 11.5A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount TO-263 (D2PAK)
Brands: ONSEMI
Mfr.Part #: FQB12P20TM
Datasheet: FQB12P20TM Datasheet (PDF)
Package/Case: D2PAK
Product Type: MOSFET
RoHS Status:
Stock Condition: 5162 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomFQB12P20TM General Description
This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A
- Low gate charge ( Typ. 31nC)
- Low Crss ( Typ. 30pF)
- 100% avalanche tested
- RoHS Compliant
Application
- Other Industrial
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | FQB12P20TM | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Manufacturer Package Code | 418AJ | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Factory Lead Time | 40 Weeks |
| Samacsys Manufacturer | onsemi | Additional Feature | FAST SWITCHING |
| Avalanche Energy Rating (Eas) | 810 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (ID) | 11.5 A | Drain-source On Resistance-Max | 0.47 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 | Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 120 W | Pulsed Drain Current-Max (IDM) | 46 A |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FQB12P20TM is a power MOSFET chip designed for high-performance applications such as power supplies, motor control, and inverter systems. It offers low on-state resistance, high switching speed, and low gate charge for efficient power management.
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Equivalent
The equivalent products of FQB12P20TM chip include IRF3710PBF, IPP60R125CPFD, and MK54N30DN. These chips are similar in performance and can be used as substitutes in various applications requiring a power MOSFET with similar specifications. -
Features
FQB12P20TM is a MOSFET power transistor with a Vds of 200V and a maximum continuous drain current of 12A. It also has a low on-resistance, high switching speed, and is suitable for high-frequency applications. Additionally, it has a compact TO-263 package for easy mounting and heat dissipation. -
Pinout
The FQB12P20TM is a 12A, 200V N-Channel MOSFET transistor. It has a TO-263 (D2PAK) package with 3 pins: gate (G), drain (D), and source (S). The gate pin controls the flow of current between the drain and source pins. -
Manufacturer
Fairchild Semiconductor is the manufacturer of the FQB12P20TM. Fairchild Semiconductor is an American company that specializes in the design and manufacture of power and signal management, logic, discrete, and custom semiconductor solutions. They provide innovative technologies for a wide range of applications in the automotive, industrial, mobile, computing, and consumer markets. -
Application Field
The FQB12P20TM is a MOSFET transistor that is commonly used in high frequency power supplies, DC-DC converters, motor control applications, and automotive systems. With its low on-resistance and high switching speed, it is ideal for applications requiring efficient switching and high power handling capabilities. -
Package
The FQB12P20TM chip comes in a TO-263 package, with a single form factor and a size of 10mm x 10mm.
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