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FDS8858CZ
Mosfet Array 30V 8.6A, 7.3A 900mW Surface Mount 8-SOIC
Brands: ONSEMI
Mfr.Part #: FDS8858CZ
Datasheet: FDS8858CZ Datasheet (PDF)
Package/Case: SOIC-8
Product Type: MOSFET
RoHS Status:
Stock Condition: 7941 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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These dual N and P-Channel enhancement mode power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
- Q1 N-Channel
Max. RDS(on) = 17 mΩ at VGS = 10 V, ID = 8.6 A
Max. RDS(on) = 20 mΩ at VGS = 4.5 V, ID = 7.3 A - Q2 P-Channel
Max. RDS(on) = 20.5 mΩ at VGS = -10 V, ID = -7.3 A
Max. RDS(on) = 34.5 mΩ at VGS = -4.5 V, ID = -5.6 A - High Power and Current Handling Capability in a Widely Used Surface Mount Package
- Fast Switching Speed
Application
- This product is general usage and suitable for many different applications.
- Inverter
- Synchronous Buck
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | FDS8858CZ | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Package Description | ROHS COMPLIANT, 8 PIN | Manufacturer Package Code | 751EB |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 58 Weeks | Samacsys Manufacturer | onsemi |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (ID) | 8.6 A | Drain-source On Resistance-Max | 0.017 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 2 | Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | Power Dissipation-Max (Abs) | 2 W |
| Pulsed Drain Current-Max (IDM) | 20 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDS8858CZ is a power MOSFET chip that is designed for high performance and efficiency in a range of applications, including power supplies and motor control. This chip offers low on-resistance, high current capability, and fast switching speeds, making it ideal for use in various electronic devices requiring power management.
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Equivalent
The equivalent products of FDS8858CZ chip are FDS8855CZ, FDS8853CZ, and FDS8850CZ. These are all N-channel PowerTrench MOSFETs with similar specifications and performance characteristics. -
Features
The FDS8858CZ is a dual N-channel PowerTrench MOSFET with a compact package and a low on-state resistance. It has a maximum continuous drain current of 2.7A, low gate charge, and low gate threshold voltage. It is suitable for a wide range of applications requiring high efficiency and power density. -
Pinout
The FDS8858CZ is a Dual N-Channel PowerTrench MOSFET with a 8-pin Power-56 (3x3) package. Pin function includes gate control (pins 1 and 4), drain connection (pins 2 and 7), and source connection (pins 3 and 6). Pin 5 is the thermal pad. -
Manufacturer
Fairchild Semiconductor is the manufacturer of FDS8858CZ. It is a semiconductor company that specializes in the design and production of power management and analog semiconductor solutions for various applications such as mobile, industrial, automotive, and consumer electronics. Fairchild Semiconductor was acquired by ON Semiconductor in 2016, but continues to operate as a separate entity. -
Application Field
FDS8858CZ is commonly used in power management applications such as voltage regulation, power distribution, and battery charging for various electronic devices including smartphones, tablets, laptops, and wearable technology. It is also used in automotive systems, industrial control, and power supplies. -
Package
The FDS8858CZ chip comes in a DFN-8 package type with a form factor of surface mount. It measures 3mm x 3mm in size.
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