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FDS6675BZ
P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ
Brands: Onsemi
Mfr.Part #: FDS6675BZ
Datasheet: FDS6675BZ Datasheet (PDF)
Package/Case: SOIC-8
Product Type: MOSFET
RoHS Status:
Stock Condition: 6580 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomFDS6675BZ General Description
This P-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
- Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A
- Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of 5.4 KV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High power and current handing capability
- RoHS Compliant
Application
- This product is general usage and suitable for many different applications.
- Power Management
- Load Switch
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 11 A | Rds On - Drain-Source Resistance | 10.8 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 62 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
| Channel Mode | Enhancement | Tradename | PowerTrench |
| Series | FDS6675BZ | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 60 ns |
| Forward Transconductance - Min | 34 S | Height | 1.75 mm |
| Length | 4.9 mm | Product Type | MOSFET |
| Rise Time | 7.8 ns | Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Type | MOSFET | Typical Turn-Off Delay Time | 120 ns |
| Typical Turn-On Delay Time | 3 ns | Width | 3.9 mm |
| Unit Weight | 0.004586 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDS6675BZ chip is a power MOSFET transistor commonly used in electronic devices. It is designed to handle high voltage and high-current applications efficiently. This chip offers low on-resistance and fast switching capabilities, making it suitable for various power management circuits. Its compact size and affordability make it a popular choice among electronics manufacturers.
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Equivalent
The equivalent products of the FDS6675BZ chip are the AP6675BZ, FDS6675AZ, and FDS6675B chips. -
Features
The FDS6675BZ is a N-channel MOSFET transistor with a maximum drain-source voltage of 30V, a drain current of 11.7A, and a low on-resistance. It is commonly used in power conversion applications such as DC-DC converters, motor drivers, and load switches due to its high efficiency and fast switching speed. -
Pinout
The FDS6675BZ is a power MOSFET with 8 pins. Its functions include providing high-speed switching and low on-resistance for efficient power conversion. -
Manufacturer
The manufacturer of the FDS6675BZ is Fairchild Semiconductor. It is a global company that specializes in the design, manufacture, and marketing of power and discrete semiconductor products. Fairchild Semiconductor serves multiple industries, including automotive, industrial, consumer electronics, and telecommunications. -
Application Field
The FDS6675BZ is a power MOSFET transistor commonly used in applications with low voltage and current requirements. It is frequently used in small electronic devices, such as laptops, tablets, and smartphones, for switching purposes, power regulation, and protection circuits. -
Package
The FDS6675BZ chip has a package type of SOIC-8, a form factor of Surface Mount, and a small size with 4.95mm in length, 3.95mm in width, and 1.65mm in height.
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