FDS4435BZ
This product, FDS4435BZ, is a P-channel MOSFET suitable for switching applications with a 30V maximum voltage rating
Brands: Onsemi
Mfr.Part #: FDS4435BZ
Datasheet: FDS4435BZ Datasheet (PDF)
Package/Case: SOIC-8
RoHS Status:
Stock Condition: 9126 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
5 | $0.188 | $0.940 |
50 | $0.157 | $7.850 |
150 | $0.144 | $21.600 |
500 | $0.127 | $63.500 |
3000 | $0.090 | $270.000 |
6000 | $0.086 | $516.000 |
In Stock:9126 PCS
FDS4435BZ General Description
This P–Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
- Max rDS(on) = 20mΩ at VGS = –10V, ID = –8.8A
- Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –6.7A
- Extended VGSS range (–25V) for battery applications
- HBM ESD protection level of ±3.8KV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- Termination is Lead–free and RoHS compliant
Application
- This product is general usage and suitable for many different applications.
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 8.8 A | Rds On - Drain-Source Resistance | 16 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 40 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDS4435BZ | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 38 ns |
Forward Transconductance - Min | 24 S | Height | 1.75 mm |
Length | 4.9 mm | Product Type | MOSFET |
Rise Time | 13 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 68 ns |
Typical Turn-On Delay Time | 12 ns | Width | 3.9 mm |
Part # Aliases | FDS4435BZ_NL |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDS4435BZ is a power MOSFET chip that is commonly used in electronic devices for switching and amplification purposes. It is designed to handle higher current and voltage levels, making it suitable for various applications, such as power supplies, motor control, and battery protection circuits. This chip offers high efficiency and low on-resistance, making it an ideal choice for power management solutions.
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Equivalent
Equivalent products to the FDS4435BZ chip include the FDS4435AN, FDS4435AZ, and FDS4435AY chips. -
Features
The FDS4435BZ is a small-signal N-channel MOSFET. It has a low on-resistance, high current capacity, and low voltage drop characteristics, enabling efficient power switching. It also has a small footprint, making it suitable for applications with limited space. -
Pinout
The FDS4435BZ is a dual N-channel PowerTrench MOSFET. It has a pin count of 8, with 4 pins on each side of the package. The pins are labeled as Gate 1, Drain 1, Source 1, Gate 2, Drain 2, Source 2, Pin 7, and Pin 8, which are used for connecting the MOSFET to the circuit for control and power distribution purposes. -
Manufacturer
The manufacturer of the FDS4435BZ is Fairchild Semiconductor. It is a global semiconductor company that specializes in designing, manufacturing, and distributing a wide range of power, signal, and optoelectronic products for various industries such as automotive, consumer electronics, and industrial applications. -
Application Field
The FDS4435BZ is a MOSFET transistor that can be used in various applications, including power management, portable electronics, motor control, and battery chargers. This transistor is designed for low voltage and low on-resistance applications, making it suitable for devices requiring efficient power switching and control.
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