FDP8870
Featuring N-channel design, the FDP8870 is a silicon power MOSFET capable of handling currents up to 19A and voltages up to 30V
Brands: Onsemi
Mfr.Part #: FDP8870
Datasheet: FDP8870 Datasheet (PDF)
Package/Case: TO-220-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $1.452 | $1.452 |
10 | $1.324 | $13.240 |
50 | $1.243 | $62.150 |
100 | $1.160 | $116.000 |
500 | $1.123 | $561.500 |
1000 | $1.107 | $1107.000 |
In Stock:9458 PCS
FDP8870 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
- rDS(ON) = 4.1mΩ @ VGS = 10V, ID=35A
- rDS(ON) = 4.6mΩ @ VGS = 4.5V, ID=35A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
- High power and current handling capability
- RoHS Compliant
Application
- This product is general usage and suitable for many different applications.
- DC/DC Converter
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 156 A | Rds On - Drain-Source Resistance | 4.1 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Qg - Gate Charge | 132 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 160 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDP8870 | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 46 ns |
Height | 16.3 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 105 ns |
Factory Pack Quantity | 800 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 70 ns | Typical Turn-On Delay Time | 11 ns |
Width | 4.7 mm | Part # Aliases | FDP8870_NL |
Unit Weight | 0.068784 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDP8870 chip is a high voltage power MOSFET designed for use in various applications such as power supplies and motor control. It features a low on-resistance and high switching speed, offering efficient power management. The chip utilizes advanced technology to deliver high performance and reliability in demanding environments.
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Equivalent
The equivalent products of the FDP8870 chip include the IRFS7730-7PPBF, FDB99321 and IRFS7730-7CTRLPBF. -
Features
The FDP8870 is a power MOSFET designed for high speed switching applications. It has a low on-resistance, high current capability, and low gate charge for efficient operation. With its compact size and robust construction, it offers improved power density and reliability in various electronic devices and systems. -
Pinout
The FDP8870 is a power MOSFET transistor with a TO-220 package. It has three pins: gate (G), drain (D), and source (S). The gate pin controls the flow of current between the drain and source. The drain pin is where the current enters the transistor, while the source pin is where the current exits. -
Manufacturer
The FDP8870 is manufactured by Fairchild Semiconductor, a company that specializes in the design, development, and production of power semiconductors and integrated circuits. -
Application Field
The FDP8870 is a high-voltage MOSFET transistor commonly used in power management applications such as switch-mode power supplies, motor control systems, and high-frequency inverters. It is designed to handle high voltages and currents, making it suitable for various power electronics applications. -
Package
The FDP8870 chip is available in a D2PAK package type. The form factor is a surface mount device (SMD), with dimensions of approximately 6.6mm x 8.7mm x 2.3mm.
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