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FDN337N
N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ
Brands: Onsemi
Mfr.Part #: FDN337N
Datasheet: FDN337N Datasheet (PDF)
Package/Case: SSOT-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.216 | $1.080 |
| 50 | $0.171 | $8.550 |
| 150 | $0.153 | $22.950 |
| 500 | $0.129 | $64.500 |
| 3000 | $0.119 | $357.000 |
| 6000 | $0.113 | $678.000 |
In Stock:9458 PCS
FDN337N General Description
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
- 2.2 A, 30 V
RDS(ON) = 0.065 Ω @ VGS = 4.5 V
RDS(ON) = 0.082 Ω @ VGS = 2.5 V. - Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
- High density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current capability.
Application
- This product is general usage and suitable for many different applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SSOT-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 2.2 A | Rds On - Drain-Source Resistance | 65 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 9 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 500 mW |
| Channel Mode | Enhancement | Series | FDN337N |
| Brand | onsemi / Fairchild | Configuration | Single |
| Fall Time | 10 ns | Forward Transconductance - Min | 13 S |
| Height | 1.12 mm | Length | 2.9 mm |
| Product | MOSFET Small Signals | Product Type | MOSFET |
| Rise Time | 10 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | FET | Typical Turn-Off Delay Time | 17 ns |
| Typical Turn-On Delay Time | 4 ns | Width | 1.4 mm |
| Part # Aliases | FDN337N_NL |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDN337N is a power MOSFET chip manufactured by Fairchild Semiconductor. It is designed for low voltage applications and has a high drain current capability. The chip offers a compact size and low on-resistance, making it suitable for use in power management and switching applications.
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Equivalent
Equivalent products of the FDN337N chip include the FDN338P, FDS9933A, FDN349AN, and FDD6695. -
Features
The FDN337N is a power MOSFET transistor designed for high-performance switching applications. It features a low on-resistance for reduced power dissipation, a small form factor package for space-constrained designs, and a high continuous drain current capability. Additionally, this transistor has a low gate charge for efficient switching and a low threshold voltage for enhanced control. -
Pinout
The FDN337N is a dual N-channel MOSFET transistor with a pin count of 3. Its pins include the Source (S), Gate (G), and Drain (D). The function of this transistor is to control the flow of current between two circuits when a voltage is applied to the gate pin. -
Manufacturer
The manufacturer of the FDN337N is Fairchild Semiconductor. Fairchild Semiconductor is a semiconductor company that specializes in the design, manufacture, and marketing of power and signal management, logic, discrete, and custom semiconductor solutions. -
Application Field
The FDN337N is a power MOSFET used in a variety of applications, including battery powered systems, portable devices, and general purpose switching systems. It can be used as a load switch, power management switch, or in DC-DC converter circuits. The low RDS(on) and small package size make it suitable for space-constrained applications. -
Package
The FDN337N chip is offered in a SOT23 package type. It is a transistor with a dual MOSFET form and has a size of around 2.9mm x 1.3mm x 1mm.
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