FDG6303N
Mosfet Array 25V 500mA 300mW Surface Mount SC-88 (SC-70-6)
Brands: FAIRCHILD
Mfr.Part #: FDG6303N
Datasheet: FDG6303N Datasheet (PDF)
Package/Case: SC70-6
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
5 | $0.231 | $1.155 |
50 | $0.180 | $9.000 |
150 | $0.159 | $23.850 |
500 | $0.132 | $66.000 |
3000 | $0.121 | $363.000 |
6000 | $0.113 | $678.000 |
In Stock:9458 PCS
FDG6303N General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Features
- 25 V, 0.50 A continuous, 1.5 A Peak.
- RDS(ON) = 0.45 Ω @ VGS= 4.5 V,
- RDS(ON) = 0.60 Ω @ VGS= 2.7 V.
- Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V).
- Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
- Compact industry standard SC70-6 surface mount package.
Application
- This product is general usage and suitable for many different applications.
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-323-6 | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 500 mA | Rds On - Drain-Source Resistance | 450 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 650 mV |
Qg - Gate Charge | 2.3 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 300 mW |
Channel Mode | Enhancement | Series | FDG6303N |
Brand | onsemi / Fairchild | Configuration | Dual |
Fall Time | 8.5 ns | Forward Transconductance - Min | 1.45 S |
Height | 1.1 mm | Length | 2 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 8.5 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Type | FET | Typical Turn-Off Delay Time | 17 ns |
Typical Turn-On Delay Time | 3 ns | Width | 1.25 mm |
Part # Aliases | FDG6303N_NL |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDG6303N is a low voltage, high speed, high current N-channel MOSFET driver chip commonly used in power management and motor control applications. It features low propagation delay, fast rise and fall times, and output compatible with standard CMOS and TTL logic levels. The FDG6303N is designed to drive capacitive loads with very low power consumption.
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Equivalent
The equivalent products of the FDG6303N chip are the FDG6320C, FDG6321C, and FDG6331N. These chips are also high-performance signal switches that are suitable for various applications such as battery packs, chargers, power management, and audio equipment. -
Features
1. 63-Amp MOSFETs for higher current capacity. 2. Low on-resistance for improved power efficiency. 3. Integrated body diodes for simplified circuit design. 4. RoHS compliant for environmentally friendly applications. 5. Suitable for various power management applications. -
Pinout
The FDG6303N is a Dual N-Channel PowerTrench MOSFET with a pin count of 8. Pin 1 is the gate of the first MOSFET, pin 2 is the source of the first MOSFET, pin 3 is the drain of the first MOSFET, pin 4 is the gate of the second MOSFET, and pins 5-8 are the source, gate, and drain of the second MOSFET. -
Manufacturer
The FDG6303N is manufactured by ON Semiconductor. ON Semiconductor is a multinational corporation that specializes in designing and manufacturing semiconductor components for various electronic devices and applications. The company provides a wide range of products including power management, imaging sensors, and custom ASIC solutions for automotive, industrial, and consumer markets. -
Application Field
The FDG6303N is commonly used in power management applications, such as power switches and power supplies. It can also be found in motor control and high-speed switching circuits. Its low on-resistance and high drive capability make it suitable for high-current applications in industrial, automotive, and consumer electronics. -
Package
The FDG6303N chip is in the SOT-23 package type, designed in a surface-mount configuration, and measures 2.9mm x 1.3mm x 1.1mm in size.
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