This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

FDC6306P 48HRS

Mosfet Array 20V 1.9A 700mW Surface Mount SuperSOT™-6

ISO14001 ISO9001 DUNS

Brands: ONSEMI

Mfr.Part #: FDC6306P

Datasheet: FDC6306P Datasheet (PDF)

Package/Case: TSOT-23-6

RoHS Status:

Stock Condition: 8706 pcs, New Original

Product Type: MOSFET

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
5 $0.122 $0.610
50 $0.099 $4.950
150 $0.087 $13.050
500 $0.079 $39.500
3000 $0.072 $216.000
6000 $0.068 $408.000

In Stock:8706 PCS

- +

Quick Quote

Please submit RFQ for FDC6306P or email to us: Email: [email protected], we will contact you within 12 hours.

FDC6306P General Description

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

FDC6306P

Features

  • -1.9 A, -20 V
  • RDS(on) = 0.170 Ω @ VGS = -4.5 V
  • RDS(on) = 0.250 Ω @ VGS = -2.5 V
  • Low gate charge (2.3nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Application

  • This product is general usage and suitable for many different applications.

Specifications

Parameter Value Parameter Value
Source Content uid FDC6306P Pbfree Code Yes
Part Life Cycle Code Active Ihs Manufacturer ONSEMI
Package Description SUPERSOT-6 Manufacturer Package Code 419BL
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer onsemi Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 0.17 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 2
Number of Terminals 6 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The FDC6306P is a power management chip designed for portable devices. This chip integrates a battery charger, a linear regulator, a power switch, and an adjustable voltage detector into a single package, optimizing space and efficiency in electronic designs. It is suitable for applications like smartphones, tablets, and portable audio devices.
  • Equivalent

    The equivalent products of the FDC6306P chip are the FDC6305N and FDC6306N. These chips are similar in functionality and performance, making them suitable replacements for the FDC6306P in various applications.
  • Features

    The FDC6306P is a P-channel PowerTrench MOSFET with a low on-state resistance, high current rating, and low gate charge. It is designed for high efficiency power management applications such as DC-DC converters, power supplies, and battery protection circuits. It features a compact Power33 package for space-constrained designs.
  • Pinout

    The FDC6306P is a 6-channel electronic fuse with an integrated IC and power MOSFETs. It has 8 pins which include VCC, IN1-IN6, VOUT, and GND. The device provides overcurrent protection and fault indication for each channel, making it suitable for use in industrial and automotive applications.
  • Manufacturer

    The FDC6306P is a product manufactured by ON Semiconductor. ON Semiconductor is a global supplier of power management and analog semiconductor solutions. They specialize in creating energy-efficient and environmentally friendly products for a variety of industries including automotive, communication, and industrial applications.
  • Application Field

    The FDC6306P is popularly used in various applications such as liquid level sensing, proximity detection, flow rate monitoring, and touch sensing in consumer electronics, automotive, industrial automation, and medical devices. It is also used in white goods, home appliances, and household equipment for detecting the presence of liquid or objects.
  • Package

    The FDC6306P chip is available in a PowerVQFN-8 package type. Its form is Surface Mount and the size of the chip is 2mm x 2mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • FDP032N08

    FDP032N08

    Onsemi

    75V 235A N-Ch MOSFET PowerTrench TO220

  • 2SK2225-E

    2SK2225-E

    Renesas

    MOSFET Power Transistor 2SK2225-E: Lead-Free, TO-3...

  • FDP150N10

    FDP150N10

    ON Semiconductor, LLC

    MOSFET 100V N-Channel PowerTrench

  • SCT30N120

    SCT30N120

    Stmicroelectronics

    N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole H

  • FDP8896

    FDP8896

    Onsemi

    The FDP8896 is a 3-pin transistor with N-channel M...

  • FDPF045N10A

    FDPF045N10A

    ON Semiconductor, LLC

    N-Channel 100 V 67A (Tc) 43W (Tc) Through Hole TO-...