Infineon CY7C1512KV18-300BZXC

Part points

• The CY7C1512KV18-300BZXC chip is a high-density synchronous SRAM device with a capacity of 72 megabits. It operates at a frequency of 300 MHz and features a synchronous read and write access. The chip is designed for applications that require high-speed data retention and random access, making it suitable for networking, telecom, and storage systems.

• Equivalent

  The equivalent products of the CY7C1512KV18-300BZXC chip are the IDT7133LA35J and the ISSI IS61LV25616AL-10BL.

• Features

  The CY7C1512KV18-300BZXC is a high-performance synchronous SRAM that offers a density of 72 Mb. It operates at a voltage of 1.2V and provides a fast access time of 10 ns. This device utilizes Double Data Rate architecture for efficient data transfer and includes a burst write mode for increased performance.

• Pinout

  The CY7C1512KV18-300BZXC is a 324-ball BGA package with a 16-bit DDR4 SDRAM. It has a pin count of 324 and functions as a high-speed memory module.

• Manufacturer

  Cypress Semiconductor is the manufacturer of the CY7C1512KV18-300BZXC. It is a leading American semiconductor design and manufacturing company.

• Application Field

  The CY7C1512KV18-300BZXC is a high-speed synchronous SRAM memory device primarily used in computer systems, networking equipment, and telecommunications infrastructure. It is suitable for applications that require fast data access, data buffering, and caching functionality.

• Package

  The CY7C1512KV18-300BZXC chip has a BGA package type, form factor of 324-ball grid array, and a size of 15mm x 15mm.