This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

BU808DFI

Darlington NPN Switching Transistors

ISO14001 ISO9001 DUNS

Brands: Stmicroelectronics

Mfr.Part #: BU808DFI

Datasheet: BU808DFI Datasheet (PDF)

Package/Case: SOT-93

Product Type: Darlington Transistors

RoHS Status:

Stock Condition: 9458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Add To Bom

Quick Quote

Please submit RFQ for BU808DFI or email to us: Email: [email protected], we will contact you within 12 hours.

BU808DFI General Description

The BU808DFI is a high voltage NPN Bipolar Power Transistor designed for use in power supply and power switching applications. It has a maximum collector current rating of 12A and a maximum collector-emitter voltage of 700V. The transistor is housed in a TO-3P package with through-hole mounting.The BU808DFI features a low saturation voltage which makes it suitable for use in high efficiency power supply designs. It also has a high current gain and high switching speed, making it ideal for power switching applications. The device is designed to handle high power loads and has a maximum power dissipation rating of 125W.The transistor has a wide operating temperature range of -55°C to 150°C, making it suitable for use in a variety of environmental conditions. It is also RoHS compliant, ensuring that it meets the latest environmental regulations.

Features

  • High voltage capability, up to 700V
  • Fast switching speed for improved efficiency
  • Low VCE(sat) for reduced power dissipation
  • Low leakage current for energy savings
  • Integrated freewheeling diode for added protection
  • RoHS compliant for environmental sustainability

Application

  • Industrial motor drives
  • Power management systems
  • Uninterruptible power supplies (UPS)
  • Servo drives
  • Solar inverters
  • Switched-mode power supplies
  • Welding equipment
  • Medical equipment
  • Automotive power systems
  • Grid-tied inverters

Specifications

Parameter Value Parameter Value
Product Category Darlington Transistors RoHS Details
Configuration Single Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 700 V Emitter- Base Voltage VEBO 5 V
Collector- Base Voltage VCBO 1.4 kV Maximum DC Collector Current 8 A
Pd - Power Dissipation 52 W Mounting Style SMD/SMT
Package / Case SOT-93 Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series BU808D
Brand STMicroelectronics Continuous Collector Current 8 A
DC Collector/Base Gain hfe Min 60, 20 Height 14.9 mm
Length 16.2 mm Product Type Darlington Transistors
Factory Pack Quantity 30 Subcategory Transistors
Width 5.65 mm

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The BU808DFI chip is a power transistor that is commonly used in electronic devices and power supplies. It is designed to handle high voltages and currents, making it suitable for applications that require efficient power management. The chip offers low saturation voltage and high reliability, making it a popular choice in various industries.
  • Equivalent

    There are no direct equivalent chips to the BU808DFI. However, similar alternative options you can consider are the STMicroelectronics STW13N80K5, ON Semiconductor BUK9535-100A, and Infineon Technologies BSP315P. Always refer to the datasheets for proper evaluation and selection of the suitable replacement.
  • Features

    The BU808DFI is a high voltage fast-switching NPN power transistor. Its features include a collector-emitter voltage of 700V, a collector current of 3A, a low VCE(sat) to minimize power dissipation, and built-in diode protection. It is suitable for high-voltage switching applications and switch-mode power supply systems.
  • Pinout

    The BU808DFI is a silicon NPN power transistor designed for high-voltage, high-speed power switching applications. It has a pin count of 3, with pin 1 being the collector, pin 2 the base, and pin 3 the emitter.
  • Manufacturer

    The manufacturer of the BU808DFI is STMicroelectronics, a multinational semiconductor and electronics company.
  • Application Field

    The BU808DFI is a high voltage fast-switching NPN bipolar power transistor commonly used in applications such as switching power supplies, motor control, electronic ballasts, and other high voltage switching circuits. It is designed for high speed switching and low saturation voltage, making it suitable for various industrial and consumer electronic applications.
  • Package

    The BU808DFI chip is available in a TO-3P-3 package type, which is a through-hole configuration with three legs. It has a tab form and a size that is about 10.4 mm x 17.8 mm x 5.95 mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • MJE5731AG

    MJE5731AG

    Onsemi

    The MJE5731AG is a PNP transistor suitable for gen...

  • MJF18008G

    MJF18008G

    Onsemi

    8A 450V 45W NPN Bipolar Transistors

  • MJ15004G

    MJ15004G

    Onsemi

    The MJ15003 and MJ15004 serve as power transistors...

  • MJ21195G

    MJ21195G

    Onsemi

    ROHS compliant TO-204AA transistors with 250V volt...

  • MJ21196G

    MJ21196G

    Onsemi

    Bipolar NPN Transistor, 250V, 16A

  • PD55015-E

    PD55015-E

    STMicroelectronics, Inc

    RF Mosfet 12.5 V 150 mA 500MHz 14dB 15W PowerSO-10...