BSS123-7-F
N-Channel 100 V 6 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
Brands: DIODES INC
Mfr.Part #: BSS123-7-F
Datasheet: BSS123-7-F Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 6633 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
20 | $0.023 | $0.460 |
200 | $0.020 | $4.000 |
600 | $0.018 | $10.800 |
3000 | $0.017 | $51.000 |
9000 | $0.016 | $144.000 |
21000 | $0.015 | $315.000 |
In Stock:6633 PCS
BSS123-7-F General Description
MOSFET,N CH,100V,0.17A,SOT23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 170mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
Features
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- High Drain-Source Voltage Rating
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)
Application
SWITCHINGSpecifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | DIODES INC |
Package Description | SOT-23, 3 PIN | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 84 Weeks | Samacsys Manufacturer | Diodes Inc. |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 0.17 A | Drain-source On Resistance-Max | 6 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 6 pF |
JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 0.3 W |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSS123-7-F is a N-channel MOSFET chip primarily used for switching applications in low voltage circuits. It has a maximum drain-source voltage of 100V and a continuous drain current of 170mA. The chip is commonly used in applications such as power management, battery charging, and LED lighting control.
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Equivalent
The equivalent products of the BSS123-7-F chip are BSS123LT1G, BSS123 E6327, BSS123LT1. -
Features
1. N-channel enhancement mode MOSFET 2. Low on-resistance (RDS(ON) = 2.5 ohms) 3. Low threshold voltage (Vgs(th) = 1 to 2 V) 4. Small SOT-23 surface mount package 5. Suitable for low power applications such as load switch, LED drive, and level shifting circuits. -
Pinout
The BSS123-7-F is a N-channel MOSFET transistor with a SOT-23 package. It has three pins: Gate (G), Drain (D), and Source (S). Its function includes switching and amplification in electronic circuits, commonly used in applications like power management and signal processing. -
Manufacturer
The BSS123-7-F is manufactured by ON Semiconductor, a leading American semiconductor company. ON Semiconductor specializes in power and signal management, energy-efficient semiconductors, and manufacturing solutions for industries such as automotive, communications, computing, consumer, industrial, and medical. -
Application Field
The BSS123-7-F is commonly used in applications such as load switching, level shifting, and signal routing in portable devices, power management circuits, and low-voltage applications. It is also suitable for use in battery-powered systems, DC-DC converters, and switching regulators due to its low threshold voltage and high current handling capabilities. -
Package
The BSS123-7-F chip comes in a SOT-23 package type, with a single P-channel MOSFET transistor. It has a form factor of surface mount, with dimensions of 2.9mm x 1.3mm x 1.0mm. The chip size is 3.1mm².
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