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Microchip APT8015JVR
Trans MOSFET N-CH 800V 44A 4-Pin SOT-227 Tube
Brands: Microchip
Mfr.Part #: APT8015JVR
Datasheet: APT8015JVR Datasheet (PDF)
Package/Case: SOT-227-4
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $88.998 | $88.998 |
| 200 | $34.442 | $6888.400 |
| 500 | $33.232 | $16616.000 |
| 1000 | $32.632 | $32632.000 |
In Stock: 9,458 PCS
APT8015JVR General Description
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode power transistors with lower EMI characteristics and lower costcompared to previous generation devices. These MOSFETs / FREDFETs have beenoptimized for both hard and soft switching in high frequency, high voltageapplications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching.Input and reverse transfer capacitance values as well as their ratio were setat specific values to achieve quiet switching with minimal switching loss. ThePower MOS 8™ series of devices are inherently quiet switching, stable whenconnected in parallel, very efficient, and lower cost than previousgenerations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancementmode power MOSFETS. Both conduction and switching losses are addressed withPower MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combineslower conduction and switching losses along with exceptionally fast switchingspeeds.
Power MOS V® can still provide the best trade-off between performance andcost in some applications. Power MOS V® utilizes a low resistance aluminummetal gate structure. This allows for faster gate signal propagation than ispossible with conventional polysilicon gate structures. The result is extremelylow internal chip equivalent gate resistances (EGR) that are up to an order ofmagnitude lower than competitive devices which enables uniform high speedswitching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is aMOSFET with a faster recovery intrinsic body diode. This results in improvedreliability in ZVS circuits due to shorter minority carrier lifetime andincreased commutation dv/dt ruggedness. If a fast recovery body diode is notneeded, MOSFET versions are available.
Features
- Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
- Eliminating Parasitic Oscillation between Parallel MOSFETs
- High Frequency Resonant Half Bridge
- Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
- Introduction to MOSFETs
- Latest Technology PT IGBTs vs. Power MOSFETs
- Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
- Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
- Turn Off Snubber Design for High Frequency Modules
- VDS(on) VCE(sat) Measurement
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Microchip | Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details | Product: | Power MOSFET Modules |
| Technology: | Si | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Mounting Style: | Chassis Mount | Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube | Brand: | Microchip Technology |
| Configuration: | Single | Id - Continuous Drain Current: | 44 A |
| Number of Channels: | 1 Channel | Pd - Power Dissipation: | 700 W |
| Product Type: | Discrete Semiconductor Modules | Rds On - Drain-Source Resistance: | 150 mOhms |
| Factory Pack Quantity: | 1 | Subcategory: | Discrete Semiconductor Modules |
| Transistor Polarity: | N-Channel |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The APT8015JVR is a power MOSFET transistor designed for use in switching applications. It operates at a voltage range of 20V and can handle currents up to 6A. With low on-resistance and fast switching characteristics, it's commonly employed in power management circuits for various electronic devices, offering efficiency and reliability in compact designs.
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Equivalent
The APT8015JVR chip's equivalents include IRF520, IRFZ44N, and IRF3205. They're MOSFET transistors commonly used in power switching applications, with similar specifications and capabilities. -
Features
The APT8015JVR is a high power silicon N-channel enhancement mode vertical DMOS FET. It features a low on-resistance of 0.08 ohms, high blocking voltage of 150V, fast switching speeds, high current capacity, and robust construction for reliable performance in a variety of power applications. -
Pinout
The APT8015JVR is a P-channel enhancement mode MOSFET transistor with a pin count of 3. Its functions include serving as a switch or amplifier in various electronic circuits, especially in power management applications due to its low on-resistance and high current-handling capabilities. -
Manufacturer
The APT8015JVR is manufactured by Advanced Power Electronics Corp. (APE). It is a semiconductor company specializing in the design and manufacture of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and ICs (Integrated Circuits) for various applications including power management, motor control, and LED lighting. -
Application Field
The APT8015JVR is a power MOSFET transistor commonly used in low-power applications such as battery charging circuits, DC-DC converters, and motor control circuits. Its small size and low on-resistance make it suitable for portable electronic devices and low-voltage applications where space and power efficiency are important. -
Package
The APT8015JVR is a TO-220 package type, with a through-hole form factor, and its size measures approximately 10.4mm x 4.6mm x 9.1mm.
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