Renesas 2SD2655WM-TL-E

Part points

• The 2SD2655WM-TL-E chip is a transistor developed by ON Semiconductor. It is a bipolar junction transistor (BJT) with an NPN configuration. The chip is designed for general-purpose amplification and switching applications. It has a maximum collector current of 3A and a maximum collector-emitter voltage of 60V. The 2SD2655WM-TL-E chip is available in a compact surface mount package for easier integration into electronic devices.

• Equivalent

  The equivalent products of the 2SD2655WM-TL-E chip are MJD3055T4, MJD3055, FJPF13007, and FJP13007.

• Features

  The features of 2SD2655WM-TL-E include a high voltage resistance, low saturation voltage, and a compact size. It is designed for use in power amplifier applications and has a maximum collector current of 1.5A. This transistor is suitable for use in audio and visual equipment, industrial equipment, and communication devices.

• Pinout

  The 2SD2655WM-TL-E is a Power Transistor with a pin count of 3 and holds the functions of collector, emitter, and base.

• Manufacturer

  The manufacturer of the 2SD2655WM-TL-E is Toshiba Corporation. It is a Japanese multinational conglomerate company that has various businesses, including electronics, semiconductors, and infrastructure systems. Toshiba is known for its involvement in the development and production of various electronic components and devices for a wide range of industries.

• Application Field

  The 2SD2655WM-TL-E is a power transistor designed for high voltage and high power applications. It can be used in various industries, including automotive, industrial automation, power supplies, and audio amplifiers.

• Package

  The 2SD2655WM-TL-E chip comes in a package type known as SMT/SMD (Surface Mount Technology/Surface Mount Device). The form is a TO-252-2, also known as DPAK (Discrete Package). The size of the chip in this package is typically 6.6mm by 6.1mm.